Light Emitting Display Device with Integrated Touch Screen

ABSTRACT

A light emitting display device with an integrated touch screen includes: a substrate which includes a display area in which a plurality of display pixels is disposed and a non-display area around the display area; a light emitting diode in the display area; an encapsulation unit which covers the display area and the non-display area; a touch electrode line on the encapsulation unit; a touch routing line which is disposed in the non-display area and is connected to the touch electrode line; a plurality of blocking structures which is disposed in the non-display area and is configured to enclose the display area; and a step compensation layer disposed between the encapsulation unit and the touch routing line; wherein the step compensation layer reduces a step caused by the plurality of blocking structures to reduce irregularities of a surface of the encapsulation unit.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority of Republic of Korea PatentApplication No. 10-2020-0080468 filed on Jun. 30, 2020, in the KoreanIntellectual Property Office, the disclosure of which is herebyincorporated by reference in its entirety.

BACKGROUND Field

The present disclosure relates to a light emitting display device withan integrated touch screen.

Description of the Related Art

As the information society develops, demands for display devices whichdisplay images are increasing and various types of display devices suchas a liquid crystal display device or an organic light emitting displaydevice are utilized.

In order to provide various functions to users, the display devicerecognizes a touch of a user on a display panel and performs inputprocessing based on the recognized touch. For example, a plurality oftouch electrodes is disposed in an active area of the display panel. Thedisplay device senses the touch by sensing a change in a capacitance ofthe touch electrode generated by the touch of the user. Specifically,when the display device is applied to an organic light emitting displaydevice, elements which configure the touch element may be formed aboveor below an encapsulation film for protecting a light emitting unit ofthe organic light emitting display device. That is, in order to sensethe touch of the user on the display panel, a plurality of touchelectrodes are disposed in the display panel and a touch connection linewhich connects the touch electrodes and a driving circuit is disposed.

An active area of the display panel in which the touch electrodes aredisposed may have various shapes and, in some cases, an area where amodule such as a camera sensor or a proximity sensor is disposed may belocated in the active area. Further, the area where the sensor isdisposed may be disposed in the form of a hole in the active area.

However, there is a problem that it is difficult to dispose the touchelectrode on the display panel depending on a type or a structuralcharacteristic of the touch display device. There is another problem inthat a failure that the touch connection line is shorted or disconnectedmay occur due to a basic structure of the display panel.

SUMMARY

When a touch electrode and a touch line are formed on an encapsulationunit which configures a panel of the display device, rather thanseparately manufacturing a touch panel to be attached to a displaypanel, touch lines are shorted due to a step caused by a blockingstructure in a non-display area, which causes a failure of a touchoperation.

Therefore, an object of the present disclosure is to provide a lightemitting display device with an integrated touch screen which relieves ahigh step caused by a blocking structure.

Objects of the present disclosure are not limited to the above-mentionedobjects, and other objects, which are not mentioned above, can beclearly understood by those skilled in the art from the followingdescriptions.

In order to achieve the above-described object, according to an aspectof the present disclosure, a light emitting display device with anintegrated touch screen includes a substrate which includes a displayarea in which a plurality of pixels are disposed and a non-display areaaround the display area. An opening area which is located inside thedisplay area and passes through the substrate and a function layer thereabove and a boundary area which is disposed to be in contact with theoutside of the opening area may be included. There is a pixel area inthe display area excluding the opening area and the boundary area. Anencapsulation layer or encapsulation unit which covers the pixel area,the non-display area, and the boundary area may be included. A pluralityof first touch electrodes which are disposed on the encapsulation layeror encapsulation unit of the pixel area and extends in a first directionand a plurality of second touch electrodes which extends in a seconddirection may be included. There are first and second blockingstructures which are disposed in the non-display area and are configuredto enclose the display area. A first touch routing line which isdisposed on the first and second blocking structures and is connected tothe first touch electrode may be included. A second touch routing linewhich is disposed on the first and second blocking structures and isconnected to the second touch electrode may be included. An organiccover layer which covers the first touch routing line and the secondtouch routing line and a touch buffer layer which covers theencapsulation layer or encapsulation unit may be included. A stepcompensation layer which is located between the touch buffer layer andthe first touch routing line and the second touch routing line may beincluded and the step compensation layer may be disposed to overlap thefirst and second blocking structures.

Further, according to another aspect of the present disclosure, a lightemitting display device with an integrated touch screen includes asubstrate which includes a display area in which a plurality of pixelsare disposed and a non-display area around the display area. A lightemitting diode may be disposed in the display area. An encapsulationunit which covers the display area and the non-display area is disposedand a touch sensor layer or touch electrode line may be located on theencapsulation unit. A touch routing line which is connected to the touchsensor layer or touch electrode line may be formed in the non-displayarea. An organic cover layer which is formed above the touch sensorlayer or touch electrode line and the touch routing line and covers thetouch sensor layer or touch electrode line and the touch routing linemay be included. A plurality of blocking structures are disposed in thenon-display area and are configured to enclose the display area and astep compensation layer between the encapsulation unit and the touchrouting line may be included. The step compensation layer reduces thestep caused by the plurality of blocking structures to reduce theirregularities of the surface of the encapsulation unit.

Other detailed matters of the exemplary embodiments are included in thedetailed description and the drawings.

According to exemplary embodiments of the present disclosure, a stepcompensation layer which relieves a high step caused by a blockingstructure is disposed above the blocking structure which overlaps touchrouting lines of a display panel, thereby suppressing disconnection ofthe touch routing lines which pass through the blocking structure.

The effects according to the present disclosure are not limited to thecontents exemplified above, and more various effects are included in thepresent specification.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and other advantages of thepresent disclosure will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

Figure (FIG. 1 is a view illustrating a schematic configuration of alight emitting display device with an integrated touch screen accordingto exemplary embodiments of the present disclosure;

FIG. 2 is a view schematically illustrating a display panel of a lightemitting display device with an integrated touch screen according toexemplary embodiments of the present disclosure;

FIG. 3 is an exemplary view illustrating a structure in which a touchpanel is embedded in a display panel according to exemplary embodimentsof the present disclosure;

FIGS. 4 and 5 are exemplary views illustrating a type of a touchelectrode disposed in a display panel according to exemplary embodimentsof the present disclosure;

FIG. 6 is an exemplary view illustrating a mesh-type touch electrode ofFIG. 5 according to one embodiment;

FIG. 7 is a view illustrating a touch sensor structure in a displaypanel according to exemplary embodiments of the present disclosure;

FIG. 8 is a view of an implementation example of a touch sensorstructure of FIG. 7 according to one embodiment;

FIG. 9 is a partial cross-sectional view of a display panel which is anexample of a cross-sectional structure taken along the line X-X′ of FIG.8 according to exemplary embodiments of the present disclosure;

FIGS. 10 and 11 are exemplary views illustrating a cross-sectionalstructure in which a color filter is included in a display panelaccording to exemplary embodiments of the present disclosure;

FIG. 12 is a view illustrating an example of a structure in which holesare disposed in an active area of a display panel according to exemplaryembodiments of the present disclosure;

FIG. 13 is a view illustrating an example of a cross-sectional structuretaken along the line Y-Y′ of FIG. 12 according to one embodiment;

FIG. 14 is a view illustrating a cross-section taken along the line X-X′of FIG. 8 as another exemplary embodiment of the present disclosure;

FIG. 15 is a plan view illustrating a light emitting display device withan integrated touch screen as an exemplary embodiment of the presentdisclosure;

FIG. 16 is a view illustrating a cross-sectional structure taken alongthe line Z-Z′ of FIG. 15 according to one embodiment; and

FIG. 17 is a view illustrating an example of a cross-sectional structuretaken along the line Z-Z′ of FIG. 15 as another exemplary embodiment ofthe present disclosure.

DETAILED DESCRIPTION

Advantages and characteristics of the present disclosure and a method ofachieving the advantages and characteristics will be clear by referringto exemplary embodiments described below in detail together with theaccompanying drawings. However, the present disclosure is not limited tothe exemplary embodiments disclosed herein but will be implemented invarious forms. The exemplary embodiments are provided by way of exampleonly so that those skilled in the art can fully understand thedisclosures of the present disclosure and the scope of the presentdisclosure. Therefore, the present disclosure will be defined only bythe scope of the appended claims.

The shapes, sizes, ratios, angles, numbers, and the like illustrated inthe accompanying drawings for describing the exemplary embodiments ofthe present disclosure are merely examples, and the present disclosureis not limited thereto. Like reference numerals generally denote likeelements throughout the specification. Further, in the followingdescription of the present disclosure, a detailed explanation of knownrelated technologies may be omitted to avoid unnecessarily obscuring thesubject matter of the present disclosure. The terms such as “including,”“having,” and “comprising” used herein are generally intended to allowother components to be added unless the terms are used with the term“only”. Any references to singular may include plural unless expresslystated otherwise.

Components are interpreted to include an ordinary error range even ifnot expressly stated.

When the position relation between two parts is described using theterms such as “on”, “above”, “below”, and “next”, one or more parts maybe positioned between the two parts unless the terms are used with theterm “immediately” or “directly”.

When an element or layer is disposed “on” another element or layer, itmay be directly disposed on the another layer or another element, oranother layer or another element may be interposed therebetween.

Although the terms “first”, “second”, and the like are used fordescribing various components, these components are not confined bythese terms. These terms are merely used for distinguishing onecomponent from the other components. Therefore, a first component to bementioned below may be a second component in a technical concept of thepresent disclosure.

Same reference numerals generally denote same elements throughout thespecification.

A size and a thickness of each component illustrated in the drawing areillustrated for convenience of description, and the present disclosureis not limited to the size and the thickness of the componentillustrated.

The features of various embodiments of the present disclosure can bepartially or entirely adhered to or combined with each other and can beinterlocked and operated in technically various ways, and theembodiments can be carried out independently of or in association witheach other.

Hereinafter, embodiments of the present disclosure will be described indetail with reference to the accompanying drawings.

FIG. 1 is a view of a system configuration of a light emitting displaydevice with an integrated touch screen according to exemplaryembodiments of the present disclosure.

Referring to FIG. 1, a light emitting display device with an integratedtouch screen according to exemplary embodiments of the presentdisclosure may provide both a function for displaying images and afunction for sensing touches.

In order to provide an image displaying function, the light emittingdisplay device with an integrated touch screen according to exemplaryembodiments of the present disclosure may include a display panel DISP,a data driving circuit DDC, a gate driving circuit GDC, and a displaycontroller DCTR. In the display panel DISP, a plurality of data linesand a plurality of gate lines are disposed, and a plurality of pixels orsub-pixels defined by the plurality of data lines and the plurality ofgate lines are disposed. The data driving circuit DDC drives theplurality of data lines and the gate driving circuit GDC drives theplurality of gate lines. The display controller DCTR controls operationsof the data driving circuit DDC and the gate driving circuit GDC.

Each of the data driving circuit DDC, the gate driving circuit GDC, andthe display controller DCTR may be implemented by one or more individualcomponents. In some cases, two or more of the data driving circuit DDC,the gate driving circuit GDC, and the display controller DCTR may beimplemented to be combined as one component. For example, the datadriving circuit DDC and the display controller DCTR may be implementedas one integrated circuit (IC) chip.

In order to provide a touch sensing function, the light emitting displaydevice with an integrated touch screen according to exemplaryembodiments of the present disclosure may include a touch panel TSP anda touch sensing circuit TSC. The touch panel TSP includes a plurality oftouch electrodes. The touch sensing circuit TSC supplies a touch drivingsignal to the touch panel TSP and detects a touch sensing signal fromthe touch panel TSP to sense the presence of a touch of a user or atouch position (touch coordinate) in the touch panel TSP based on thedetected touch sensing signal.

For example, the touch sensing circuit TSC may include a touch drivingcircuit TDC and a touch controller TCTR. The touch driving circuit TDCsupplies a touch driving signal to the touch panel TSP and detects atouch sensing signal from the touch panel TSP. The touch controller TCTRsenses the presence of a touch of a user and/or a touch position in thetouch panel TSP based on the touch sensing signal detected by the touchdriving circuit TDC.

The touch driving circuit TDC may include a first circuit part whichsupplies the touch driving signal to the touch panel TSP and a secondcircuit part which detects the touch sensing signal from the touch panelTSP.

The touch driving circuit TDC and the touch controller TCTR may beimplemented by separate components or in some cases, may be implementedto be combined as one component.

In the meantime, each of the data driving circuit DDC, the gate drivingcircuit GDC, and the touch driving circuit TDC may be implemented by oneor more integrated circuits. From the viewpoint of electrical connectionwith the display panel DISP, the circuits may be implemented by a chipon glass (COG) type, a chip on film (COF) type, or a tape carrierpackage (TCP) type. Further, the gate driving circuit GDC may also beimplemented by a gate in panel (GIP) type.

In the meantime, each of circuit configurations DDC, GDC, and DCTR fordisplay driving and circuit configurations TDC and TCTR for touchsensing may be implemented by one or more individual components. In somecases, one or more of circuit configurations DDC, GDC, and DCTR fordisplay driving and one or more of circuit configurations TDC and TCTRfor touch sensing are functionally combined to be implemented by one ormore components.

For example, the data driving circuit DDC and the touch driving circuitTDC may be implemented to be combined in one or two or more integratedcircuit chips. When the data driving circuit DDC and the touch drivingcircuit TDC are implemented to be combined in two or more integratedcircuit chips, each of two or more integrated circuit chips may have adata driving function and a touch driving function.

In the meantime, the light emitting display device with an integratedtouch screen according to exemplary embodiments of the presentdisclosure may be various types such as an organic light emittingdisplay device or a liquid crystal display device. In the followingdescription, for the convenience of description, it will be describedthat the light emitting display device with an integrated touch screenis an organic light emitting display device as an example. That is, eventhough the display panel DISP may be various types such as an organiclight emitting display panel or a liquid crystal display panel, in thefollowing description, for the convenience of description, it will bedescribed that the display panel is an organic light emitting displaypanel as an example.

Further, as it will be described below, the touch panel TSP may includea plurality of touch electrodes which are applied with a touch drivingsignal or detects a touch sensing signal therefrom, a plurality of touchrouting lines which connects the plurality of touch electrodes to thetouch driving circuit TDC, and the like.

The touch panel TSP may be provided at the outside of the display panelDISP. That is, the touch panel TSP and the display panel DISP may beseparately manufactured to be combined. Such a touch panel TSP is calledan external type or an add-on type.

In contrast, the touch panel TSP may be embedded in the display panelDISP. That is, when the display panel DISP is manufactured, a touchsensor structure such as a plurality of touch electrodes and a pluralityof touch routing lines which configure a touch panel TSP may be formedtogether with electrodes and signal lines for display driving. Such atouch panel TSP is called an embedded type. In the followingdescription, for the convenience of description, it will be describedthat the touch panel TSP is an embedded type as an example.

FIG. 2 is a view schematically illustrating a display panel DISP of alight emitting display device with an integrated touch screen accordingto exemplary embodiments of the present disclosure.

Referring to FIG. 2, the display panel DISP may include an active areaAA in which images are displayed and a non-active area NA which is anouter area of an outer boundary line BL of the active area AA.

In the active area AA of the display panel DISP, a plurality ofsub-pixels for displaying images are disposed and various electrodes orsignal lines for driving the display are disposed.

Further, in the active area AA of the display panel DISP, a plurality oftouch electrodes for touch sensing, a plurality of touch routing lineselectrically connected thereto, and the like may be disposed.Accordingly, the active area AA may also be referred to as a touchsensing area which is capable of sensing the touch.

In the non-active area NA of the display panel DISP, link linesextending from various signal lines disposed in the active area AA orlink lines which are electrically connected to various signal linesdisposed in the active area AA, and pads which are electricallyconnected to the link lines may be disposed. The pads disposed in thenon-active area NA may be bonded or electrically connected with displaydriving circuits DDC, GDC, or the like.

Further, in the non-active area NA of the display panel DISP, link linesextending from a plurality of touch routing lines disposed in the activearea AA or link lines which are electrically connected to a plurality oftouch routing lines disposed in the active area AA, and pads which areelectrically connected to the link lines may be disposed. The padsdisposed in the non-active area NA may be bonded or electricallyconnected with the touch driving circuit TDC.

In the non-active area NA, a part of an outermost touch electrode amonga plurality of touch electrodes disposed in the active area AA mayexpand or one or more electrodes (touch electrodes) formed of the samematerial as the plurality of touch electrodes disposed in the activearea AA may be further disposed.

That is, all the plurality of touch electrodes disposed in the displaypanel DISP may be disposed in the active area AA or some (for example,an outermost touch electrode) among the plurality of touch electrodesdisposed in the display panel DISP may be disposed in the non-activearea NA. Some (for example, an outermost touch electrode) among theplurality of touch electrodes disposed in the display panel DISP may bedisposed in both the active area AA and the non-display area NA.

In the meantime, referring to FIG. 2, the display panel DISP of thelight emitting display device with an integrated touch screen accordingto the exemplary embodiments of the present disclosure may include a damarea DA. In the dam area, a dam DAM (see FIG. 9) is disposed to suppresscollapse of any layer (for example, an encapsulation unit ENCAP in theorganic light emitting display panel) in the active area AA. That is,the dam DAM may function to suppress an organic layer included in theencapsulation unit ENCAP from outwardly overflowing. Therefore, the damDAM may be referred to as a blocking structure.

The dam area DA may be located at a boundary of the active area AA andthe non-active area NA or at any one position of a non-active area NAwhich is an outer area of the active area AA.

The dam disposed in the dam area DA may be disposed to enclose alldirections of the active area AA or disposed only at an outside of oneor two or more parts (a part having a layer which may easily collapse)of the active area AA.

The dam disposed in the dam area DA may have one pattern in which allthe dams are connected or two or more separated patterns. Further, inthe dam area DA, only a primary dam may be disposed or two or more dams(primary dam and secondary dam) may be disposed, or three or more damsmay be disposed.

In the dam area DA, in any one direction, only the primary dam isdisposed and in the other direction, both the primary dam and thesecondary dam may be disposed.

FIG. 3 is an exemplary view illustrating a structure in which a touchpanel TSP is embedded in a display panel DISP according to exemplaryembodiments of the present disclosure.

Referring to FIG. 3, in the active area AA of the display panel DISP, aplurality of sub-pixels SP are disposed on a substrate SUB.

Each sub-pixel SP may include a light emitting diode ED, a firsttransistor T1 for driving the light emitting diode ED, a secondtransistor T2 for transmitting a data voltage VDATA to a first node N1of the first transistor T1, and a storage capacitor Cst for maintaininga constant voltage for one frame.

The first transistor T1 may include a first node N1 to which the datavoltage VDATA is applied, a second node N2 which is electricallyconnected to the light emitting diode ED, and a third node N3 to which adriving voltage VDD is applied from a driving voltage line DVL. Thefirst node N1 is a gate node, the second node N2 is a source node or adrain node, and the third node N3 is a drain node or a source node. Thefirst transistor T1 may also be referred to as a driving transistorwhich drives the light emitting diode ED.

The light emitting diode ED may include a first electrode (for example,an anode electrode), an emission layer, and a second electrode (forexample, a cathode electrode). The first electrode is electricallyconnected to the second node N2 of the first transistor T1 and thesecond electrode may be applied with a base voltage VSS.

The emission layer in such a light emitting diode ED may be an organicemission layer including an organic material. In this case, the lightemitting diode ED may be an organic light emitting diode OLED.

The second transistor T2 is controlled to be turned on or off by a scansignal SCAN applied through the gate line GL and is electricallyconnected between the first node N1 of the first transistor T1 and thedata line DL. Such a second transistor T2 is also referred to as aswitching transistor.

When the second transistor T2 is turned on by the scan signal SCAN, thesecond transistor T2 transmits the data voltage VDATA supplied from thedata line DL to the first node N1 of the first transistor T1.

The storage capacitor Cst may be electrically connected between thefirst node N1 and the second node N2 of the first transistor T1.

As illustrated in FIG. 3, each sub-pixel SP may have a 2T1C structureincluding two transistors T1 and T2 and one capacitor Cst and in somecases, may further include one or more transistors or further includeone or more capacitors.

The storage capacitor Cst may be an external capacitor which isintentionally designed at the outside of the first transistor T1, ratherthan a parasitic capacitor (for example, Cgs or Cgd) which is aninternal capacitor formed between the first node N1 and the second nodeN2 of the first transistor T1.

Each of the first transistor T1 and the second transistor T2 may be ann-type transistor or a p-type transistor.

In the meantime, as described above, in the display panel DISP, circuitelements such as a light emitting diode ED, two or more transistor T1and T2, and one or more capacitor Cst are disposed. The circuit element(specifically, a light emitting diode ED) is vulnerable to moisture oroxygen from the outside. Therefore, an encapsulation unit ENCAP may bedisposed in the display panel DISP to suppress the permeation of themoisture or oxygen from the outside into the circuit element(specifically, the light emitting diode ED).

The encapsulation unit ENCAP may be formed by one layer or a pluralityof layers.

In the meantime, in the light emitting display device with an integratedtouch screen according to the exemplary embodiments of the presentdisclosure, the touch panel TSP may be formed on the encapsulation unitENCAP.

That is, in the light emitting display device with an integrated touchscreen, a touch sensor structure such as a plurality of touch electrodesTE which forms a touch panel TSP may be disposed on the encapsulationunit ENCAP.

During the touch sensing, a touch driving signal may be applied to thetouch electrode TE, or a touch sensing signal may be detected from thetouch electrode TE. Accordingly, during the touch sensing, a potentialdifference is formed between the touch electrode TE and the cathodeelectrode which are disposed with the encapsulation unit ENCAPtherebetween so that unnecessary parasitic capacitance may be formed.Such a parasitic capacitance may degrade a touch sensitivity. Therefore,in order to lower the parasitic capacitance, a distance between thetouch electrode TE and the cathode electrode may be designed to be apredetermined value (for example, 1 μm) or larger in consideration of apanel thickness, a panel manufacturing process, and a displayperformance. To this end, for example, the thickness of theencapsulation unit ENCAP may be designed to be at least 1 μm or larger.

FIGS. 4 and 5 are exemplary views illustrating types of a touchelectrode TE disposed in a display panel DISP according to exemplaryembodiments of the present disclosure.

As illustrated in FIG. 4, each touch electrode TE disposed in thedisplay panel DISP may be a plate type electrode metal which does nothave holes. In this case, each touch electrode TE may be a transparentelectrode. That is, each touch electrode TE may be formed of atransparent electrode material so that light emitted from a plurality ofsub-pixels SP disposed there below is upwardly transmitted.

In contrast, as illustrated in FIG. 5, each touch electrode TE disposedin the display panel DISP may be an electrode metal EM which ispatterned in a mesh type to have two or more holes.

The electrode metal EM is a portion which corresponds to a substantialtouch electrode TE so that a touch driving signal is applied or a touchsensing signal is sensed thereby.

As illustrated in FIG. 5, when each touch electrode TE is an electrodemetal EM patterned in a mesh type, there may be two or more holes in anarea of the touch electrode TE.

Each of two or more holes in each touch electrode TE may correspond toan emission area of one or more sub-pixels SP. That is, a plurality ofholes serves as a path through which light emitted from the plurality ofsub-pixels SP disposed there below upwardly passes. In the followingdescription, for the convenience of description, it will be describedthat each touch electrode TE is a mesh type electrode metal EM as anexample.

The electrode metal EM corresponding to each touch electrode TE may belocated on a bank which is disposed in an area other than the emissionarea of two or more sub-pixels SP.

In the meantime, in order to form a plurality of touch electrodes TE,the electrode metal ME is broadly formed to be a mesh type and then theelectrode metal EM is cut to have a predetermined pattern toelectrically separate the electrode metals EM. Consequently, a pluralityof touch electrodes TE may be created.

An outline shape of the touch electrode TE may be a square shape such asa diamond shape or a rhombus, as illustrated in FIGS. 4 and 5 or may bevarious shapes such as a triangle, a pentagon, or a hexagon.

FIG. 6 is an exemplary view illustrating a mesh-type touch electrode TEof FIG. 5 according to one embodiment.

Referring to FIG. 6, in an area of each touch electrode TE, the meshtype electrode metal EM and one or more dummy metals DM which aredisconnected may be provided.

The electrode metal EM corresponds to a substantial touch electrode TEso that a touch driving signal is applied or a touch sensing signal issensed thereby. However, even though the dummy metal DM is provided inthe area of the touch electrode TE, the touch driving signal is notapplied and the touch sensing signal is not also sensed. That is, thedummy metal DM may be an electrically floating metal.

Accordingly, the electrode metal EM may be electrically connected to thetouch driving circuit TDC, but the dummy metal DM is not electricallyconnected to the touch driving circuit TDC.

In the area of each touch electrode TE, one or more dummy metals DM maybe provided to be disconnected from the electrode metal EM.

In contrast, only in the area of each of some touch electrodes TE amongall touch electrodes TE, one or more dummy metals DM may be provided tobe disconnected from the electrode metal EM. That is, in an area of sometouch electrodes TE, the dummy metal DM may not be provided.

In the meantime, with regard to the role of the dummy metal DM, asillustrated in FIG. 5, when one or more dummy metals DM are not providedin the area of the touch electrode TE, but only the electrode metal EMis provided as a mesh type, there may be a visibility issue that anoutline of the electrode metal EM is visible on a screen.

In contrast, as illustrated in FIG. 6, when one or more dummy metals DMare provided in the area of the touch electrode TE, the visibility issuethat an outline of the electrode metal EM is visible on the screen maybe suppressed.

Further, for each touch electrode TE, the presence or the number ofdummy metals DM (a ratio of dummy metals) is adjusted so that amagnitude of capacitance is adjusted for each touch electrode TE, toimprove a touch sensitivity.

In the meantime, some branches of the electrode metal EM formed in thearea of one touch electrode TE are cut so that the cut electrode metalEM may be formed as a dummy metal DM. That is, the electrode metal EMand the dummy metal DM may be the same material formed on the samelayer.

In the meantime, the light emitting display device with an integratedtouch screen according to the exemplary embodiments of the presentdisclosure may sense the touch based on the capacitance formed in thetouch electrode TE.

The light emitting display device with an integrated touch screenaccording to the exemplary embodiments of the present disclosure employsa capacitance-based touch sensing manner so that the touch is sensed bya mutual-capacitance-based touch sensing manner or aself-capacitance-based touch sensing manner.

According to the mutual-capacitance-based touch sensing manner, aplurality of touch electrodes TE may be classified into a driving touchelectrode (a transmission touch electrode) to which a touch drivingsignal is applied and a sensing touch electrode (a reception touchelectrode) which detects a touch sensing signal and forms a capacitancewith the driving touch electrode.

In the case of the mutual-capacitance-based touch sensing manner, thetouch sensing circuit TSC senses the presence of the touch and/or thetouch coordinate based on the change in capacitance between the drivingtouch electrode and the sensing touch electrode (mutual-capacitance)depending on the presence of a pointer such as a finger or a pen.

According to the self-capacitance-based touch sensing manner, each touchelectrode TE may serve as both a driving touch electrode and a sensingtouch electrode. That is, the touch sensing circuit TSC applies a touchdriving signal to one or more touch electrodes TE and detects a touchsensing signal by means of the touch electrode TE applied with the touchdriving signal. The touch sensing circuit TSC identifies the change incapacitance between a pointer such as a finger or a pen and the touchelectrode TE based on the detected touch sensing signal to sense thepresence of touch and/or the touch coordinate. In theself-capacitance-based touch sensing manner, the driving touch electrodeand the sensing touch electrode are not distinguished.

As described above, the light emitting display device with an integratedtouch screen according to the exemplary embodiments of the presentdisclosure may sense the touch by a mutual-capacitance-based touchsensing manner or a self-capacitance-based touch sensing manner.However, in the following description, for the convenience ofdescription, it will be described that the light emitting display devicewith an integrated touch screen performs mutual-capacitance-based touchsensing and includes a touch sensor structure therefor, as an example.

FIG. 7 is a view illustrating a touch sensor structure in a displaypanel DISP according to exemplary embodiments of the present disclosureand FIG. 8 is a view of an implementation example of a touch sensorstructure of FIG. 7 according to one embodiment.

Referring to FIG. 7, a touch sensor structure formutual-capacitance-based touch sensing may include a plurality ofX-touch electrode lines X-TEL and a plurality of Y-touch electrode linesY-TEL. Here, the plurality of X-touch electrode lines X-TEL and theplurality of Y-touch electrode lines Y-TEL are located on theencapsulation unit ENCAP. The X-touch electrode line is referred to as afirst touch electrode line and the Y-touch electrode line is referred toas a second touch electrode line.

Each of the plurality of X-touch electrode lines X-TEL may be disposedin a first direction and each of the plurality of Y-touch electrodelines Y-TEL is disposed in a second direction which is different fromthe first direction.

In the present disclosure, the first direction and the second directionare relatively different directions and for example, the first directionmay be an x-axis direction and the second direction may be a y-axisdirection. In contrast, the first direction may be a y-axis directionand the second direction may be an x-axis direction. Further, the firstdirection and the second direction may be perpendicular to each otherbut may not be perpendicular. Further, in the present disclosure, a rowand a column are relative so that the row and the column may be switcheddepending on the viewing point.

Each of the plurality of X-touch electrode lines X-TEL may be configuredby a plurality of X-touch electrodes X-TE which is electricallyconnected. Each of the plurality of Y-touch electrode lines Y-TEL may beconfigured by a plurality of Y-touch electrodes Y-TE which areelectrically connected. The X-touch electrode may be referred to as afirst touch electrode and the Y-touch electrode may be referred to as asecond touch electrode.

Here, the plurality of X-touch electrodes X-TE and the plurality ofY-touch electrodes Y-TE are included in the plurality of touchelectrodes TE and have distinguished roles (functions).

For example, the plurality of X-touch electrodes X-TE which configureseach of the plurality of X-touch electrode lines X-TEL may be drivingtouch electrodes and the plurality of Y-touch electrodes Y-TE whichconfigures each of the plurality of Y-touch electrode lines Y-TEL may besensing touch electrodes. In this case, each of the plurality of X-touchelectrode lines X-TEL corresponds to the driving touch electrode lineand each of the plurality of Y-touch electrode lines Y-TEL correspondsto the sensing touch electrode line.

In contrast, the plurality of X-touch electrodes X-TE which configuresthe plurality of X-touch electrode lines X-TEL may be sensing touchelectrodes and the plurality of Y-touch electrodes Y-TE which configuresthe plurality of Y-touch electrode lines Y-TEL may be driving touchelectrodes. In this case, each of the plurality of X-touch electrodelines X-TEL corresponds to the sensing touch electrode line and each ofthe plurality of Y-touch electrode lines Y-TEL corresponds to thedriving touch electrode line.

The touch sensor metal for touch sensing may include a plurality oftouch routing lines TL in addition to the plurality of X-touch electrodelines X-TEL and the plurality of Y-touch electrode lines Y-TEL.

The plurality of touch routing lines TL may include one or more X-touchrouting lines X-TL connected to each of the plurality of X-touchelectrode lines X-TEL and one or more Y-touch routing lines Y-TLconnected to each of the plurality of Y-touch electrode lines Y-TEL.

Referring to FIG. 8, each of the plurality of X-touch electrode linesX-TEL may include a plurality of X-touch electrodes X-TE disposed in thesame row (or column) and one or more X-touch electrode connection linesX-CL which electrically connect the plurality of X-touch electrodes.Here, the X-touch electrode connection line X-CL which connects twoadjacent X-touch electrodes X-TE may be a metal integrated with twoadjacent X-touch electrodes X-TE (an example in FIG. 8) or a metalconnected to two adjacent X-touch electrodes X-TE through a contacthole.

Each of the plurality of Y-touch electrode lines Y-TEL may include aplurality of Y-touch electrodes Y-TE disposed in the same column (orrow) and one or more Y-touch electrode connection lines Y-CL whichelectrically connect the plurality of Y-touch electrodes. Here, theY-touch electrode connection line Y-CL which connects two adjacentY-touch electrodes Y-TE may be a metal integrated with two adjacentY-touch electrodes Y-TE or a metal connected to two adjacent Y-touchelectrodes Y-TE through a contact hole (an example in FIG. 8).

In a region (a touch electrode line intersecting region) where theX-touch electrode line X-TEL and the Y-touch electrode line Y-TELintersect, the X-touch electrode connection line X-CL and the Y-touchelectrode connection line Y-CL may intersect.

In this case, in a region (a touch electrode line intersecting region)where the X-touch electrode line X-TEL and the Y-touch electrode lineY-TEL intersect, the X-touch electrode connection line X-CL and theY-touch electrode connection line Y-CL may intersect.

As described above, when the X-touch electrode connection line X-CL andthe Y-touch electrode connection line Y-CL intersect in the touchelectrode line intersecting region, the X-touch electrode connectionline X-CL and the Y-touch electrode connection line Y-CL need to belocated on different layers.

Accordingly, in order to dispose the plurality of X-touch electrodelines X-TEL and the plurality of Y-touch electrode lines Y-TEL tointersect, the plurality of X-touch electrodes X-TE, the plurality ofX-touch electrode connection lines X-CL, the plurality of Y-touchelectrodes Y-TE, and the plurality of Y-touch electrode connection linesY-CL may be located on two or more layers. The X-touch electrodeconnection line is referred to as a first touch electrode connectionline and the Y-touch electrode connection line is referred to as asecond touch electrode connection line.

Referring to FIG. 8, each of the plurality of X-touch electrode linesX-TEL is electrically connected to an X-touch pad X-TP by means of oneor more X-touch routing lines X-TL. That is, an X-touch electrode X-TEwhich is disposed at the outermost side, among the plurality of X-touchelectrodes X-TE included in one X-touch electrode line X-TEL, iselectrically connected to a corresponding X-touch pad X-TP by means ofthe X-touch routing line X-TL.

Each of the plurality of Y-touch electrode lines Y-TEL is electricallyconnected to a Y-touch pad Y-TP by means of one or more Y-touch routinglines Y-TL. That is, a Y-touch electrode Y-TE which is disposed at theoutermost side, among the plurality of Y-touch electrodes Y-TE includedin one Y-touch electrode line Y-TEL, is electrically connected to acorresponding Y-touch pad Y-TP by means of the Y-touch routing lineY-TL.

In the meantime, as illustrated in FIG. 8, the plurality of X-touchelectrode lines X-TEL and the plurality of Y-touch electrode lines Y-TELmay be disposed on the encapsulation unit ENCAP. That is, the pluralityof X-touch electrodes X-TE and the plurality of X-touch electrodeconnection lines X-CL which configures the plurality of X-touchelectrode lines X-TEL may be disposed on the encapsulation unit ENCAP.The plurality of Y-touch electrodes Y-TE and the plurality of Y-touchelectrode connection lines Y-CL which configures the plurality ofY-touch electrode lines Y-TEL may be disposed on the encapsulation unitENCAP.

In the meantime, as illustrated in FIG. 8, each of the plurality ofX-touch routing lines X-TL which are electrically connected to theplurality of X-touch electrode lines X-TEL may extend to a portion wherethe encapsulation unit ENCAP is not provided while being disposed on theencapsulation unit ENCAP to be electrically connected to the pluralityof X-touch pads X-TP. Each of the plurality of Y-touch routing linesY-TL which are electrically connected to the plurality of Y-touchelectrode lines Y-TEL may extend to a portion where the encapsulationunit ENCAP is not provided while being disposed on the encapsulationunit ENCAP to be electrically connected to the plurality of Y-touch padsY-TP. Here, the encapsulation unit ENCAP may be located in the activearea AA and in some cases, may extend to the non-active area NA.

In the meantime, as described above, in order to suppress the collapseof any layer (for example, the encapsulation unit ENCAP in the organiclight emitting display panel) in the active area AA, there may be a damarea DA in a boundary area of the active area AA and the non-active areaNA or a non-active area NA which is an outer area of the active area AA.That is, the dam DAM may function to suppress an organic layer includedin the encapsulation unit ENCAP from outwardly overflowing. Therefore,the dam DAM may be referred to as a blocking structure.

As illustrated in FIG. 8, for example, in the dam area DA, a primary damDAM1 and a secondary dam DAM2 may be disposed. Here, the secondary damDAM2 may be located at an outside more than the primary dam DAM1.

In contrast to the example of FIG. 8, only the primary dam DAM1 islocated in the dam area DA and in some cases, not only the primary damDAM1 and the secondary dam DAM2, but also one or more additional damsmay be further disposed in the dam area DA.

In the meantime, referring to FIG. 8, the encapsulation unit ENCAP maybe located at the side surface of the primary dam DAM1 or theencapsulation unit ENCAP may be located not only on the side surface ofthe primary dam DAM1, but also above the primary dam DAM1.

FIG. 9 is a partial cross-sectional view of a display panel DISP takenalong the line X-X′ of FIG. 8 according to exemplary embodiments of thepresent disclosure. However, in FIG. 9, the touch electrode TE isillustrated as a plate shape, but this is merely an example, so that thetouch electrode may be a mesh type. When the touch electrode TE is amesh type, holes of the touch electrode TE may be located on an emissionarea of the sub-pixel SP.

A buffer layer BUF having a single-layered or a multi-layered structuremay be disposed on a substrate SUB. The substrate SUB may be formed of aflexible material. When the substrate SUB is formed of a material suchas polyimide, the buffer layer BUF may be formed of a single layerconfigured by any one of an inorganic material and an organic materialin order to suppress the damage of the light emitting diode caused byimpurities such as alkali ions leaked from the substrate SUB during asubsequent process. In contrast, the buffer layer BUF may be formed of amulti-layer formed of different inorganic materials. Further, the bufferlayer BUF may also be formed of a multi-layer formed of an organic layerand an inorganic layer. The inorganic material may include any one of asilicon oxide layer SiOx, a silicon nitride layer SiNx, and a siliconoxy nitride layer SiON. The organic material may include any one ofpolyimide, benzocyclobutene series resin, and polyacrylate. An exampleof polyacrylate may include photo acryl. The first transistor T1 whichis a driving transistor in each sub-pixel SP is disposed in the activearea AA on the substrate SUB.

The first transistor T1 includes a first node electrode NE1corresponding to a gate electrode, a second node electrode NE2corresponding to a source electrode or a drain electrode, a third nodeelectrode NE3 corresponding to a drain electrode or a source electrode,a semiconductor layer SEMI, and the like.

The first node electrode NE1 and the semiconductor layer SEMI mayoverlap with a gate insulating layer GI therebetween. The second nodeelectrode NE2 is formed on an interlayer insulating layer ILD to be incontact with one side of the semiconductor layer SEMI and the third nodeelectrode NE3 is formed on the interlayer insulating layer ILD to be incontact with the other side of the semiconductor layer SEMI.

An insulating layer INS which covers the second node electrode NE2, thethird node electrode NE3, and a data line may be disposed. Theinsulating layer INS may be formed of a single layer formed of aninorganic material or a multi-layer formed of different inorganicmaterials. For example, the insulating layer INS may be formed of asingle layer of any one of a silicon oxide layer SiOx, a silicon nitridelayer SiNx, and a silicon oxy nitride layer SiON or a multi-layerthereof.

A planarization layer PLN may be disposed on the insulating layer INS.The planarization layer PLN is formed to relieve a step of a lowerstructure and protect the lower structure and is formed of an organicmaterial layer. The organic material may include any one of polyimide,benzocyclobutene series resin, and polyacrylate. An example ofpolyacrylate may include photo acryl.

The light emitting diode ED may include a first electrode E1corresponding to an anode electrode (or a cathode electrode), anemission layer EL formed on the first electrode E1, and a secondelectrode E2 corresponding to a cathode electrode (or an anodeelectrode) formed on the emission layer EL.

The first electrode E1 is electrically connected to the second nodeelectrode NE2 of the first transistor T1 which is exposed through apixel contact hole which passes through the planarization layer PLN.

A bank BANK having an opening which exposes the first electrode E1 maybe formed on the planarization layer PLN. The opening of the bank BANKmay be an area which defines an emission area. The bank BANK may beformed of an organic material such as polyimide, benzocyclobutene seriesresin, or polyacrylate. A spacer SPC may be formed on the bank BANK. Thespacer SPC may serve to avoid the contact of the mask used for asubsequent process of manufacturing an emission layer EL with alaminated material below the spacer SPC. The spacer SPC may bemanufactured simultaneously with the bank BANK using a half-tone maskduring the manufacturing of the bank BANK. Accordingly, the spacer SPCmay be formed of the same material as the bank BANK and formed as onebody with the bank BANK.

The above-described spacer SPC may be disposed anywhere above the bankBANK. For example, the spacer SPC may be disposed on the entire upperportion of the bank BANK and in this case, the width of the spacer SPCmay be smaller than that of the bank BANK. Further, the spacer SPC maybe disposed above the bank BANK with the width larger than that of thebank BANK and in this case, the spacer SPC may partially overlap theemission area. Further, the spacer SPC may be disposed above a part ofthe bank BANK. For example, the spacer SPC may be disposed on the entirebank BANK which encloses one sub-pixel, or the spacers may be disposedto be adjacent with one sub-pixel therebetween. Further, the spacers SPCmay be disposed to be adjacent with at least two sub-pixelstherebetween.

The emission layer EL is formed on the first electrode E1 of theemission area provided by the bank BANK. The emission layer EL may beformed by laminating a hole-related layer, an emission layer, and anelectron-related layer on the first electrode E1 in this order or in areverse order. The second electrode E2 is disposed to be opposite to thefirst electrode E1 with the emission layer EL therebetween.

The encapsulation unit ENCAP blocks or at least reduces permeation ofmoisture or oxygen into the light emitting diode ED which is vulnerableto the moisture or oxygen from the outside.

Such an encapsulation unit ENCAP may be formed as one layer or asillustrated in FIG. 9, may be formed by a plurality of layers PAS1, PCL,and PAS2.

For example, when the encapsulation unit ENCAP is formed of a pluralityof layers PAS1, PCL, and PAS2, the encapsulation unit ENCAP may includeone or more inorganic encapsulation layers PAS1 and PAS2 and one or moreorganic encapsulation layers PCL. As a specific example, theencapsulation unit ENCAP may have a structure in which a first inorganicencapsulation layer PAS1, an organic encapsulation layer PCL, and asecond inorganic encapsulation layer PAS2 are sequentially laminated.

Here, the organic encapsulation layer PCL may further include at leastone organic encapsulation layer or at least one inorganic encapsulationlayer.

The first inorganic encapsulation layer PAS1 is formed on the substrateSUB on which the second electrode E2 corresponding to the cathodeelectrode is formed so as to be most adjacent to the light emittingdiode ED. The first inorganic encapsulation layer PAS1 is formed of aninorganic insulating material on which low-temperature deposition isallowed, such as silicon nitride SiNx, silicon oxide SiOx, siliconoxynitride SiON, or aluminum oxide Al₂O₃. Since the first inorganicencapsulation layer PAS1 is deposited in a low temperature atmosphere,the first inorganic encapsulation layer PAS1 may suppress the damage ofthe emission layer EL including an organic material which is vulnerableto a high temperature atmosphere during a deposition process.

The organic encapsulation layer PCL is formed to have a smaller areathan the first inorganic encapsulation layer PAS1 and in this case, theorganic encapsulation layer PCL may be formed to expose both ends of thefirst inorganic encapsulation layer PAS1. The organic encapsulationlayer PCL may serve as a buffer which relieves a stress between layersdue to the bending of the light emitting display device with anintegrated touch screen which is an organic light emitting displaydevice and also serve to enhance a planarization performance. Forexample, the organic encapsulation layer PCL is formed of an organicinsulating material, such as acrylic resin, epoxy resin, polyimide,polyethylene, or silicon oxy carbon SiOC.

In the meantime, when the organic encapsulation layer PCL is formed byan inkjet manner, one or more dams DAM may be formed in a boundary areaof the non-active area NA and the active area AA or the dam area DAcorresponding to a partial area in the non-active area NA.

As described above, the dam DAM functions to suppress the overflowing ofthe organic encapsulation layer PCL included in the encapsulation unitENCAP to the outside. Therefore, the higher the height of the dam DAM,the easier the control of the overflowing of the organic encapsulationlayer PCL. However, according to the exemplary embodiment of the presentdisclosure, in the display device in which the touch panel is integrallyformed in the display panel DISP, when the touch electrode or the touchrouting line is formed, there may be a high possibility of defects thatthe wiring line becomes thinner or disconnected in an area having a highstep, like an area of the lower layer where the dam DAM is disposed.Therefore, in order to reduce the influence for forming a touchelectrode or a touch routing line, it is important to adjust the heightof the dam DAM. In order to reduce the step of the lower layer, theheight of the dam DAM is reduced, and a plurality of dams DAM may bedisposed.

For example, as illustrated in FIG. 9, the dam area DA is locatedbetween a pad area of the non-active area NA in which a plurality ofX-touch pads X-TP and a plurality of Y-touch pad Y-TP are formed and theactive area AA. In such a dam area DA, there may be a primary dam DAM1adjacent to the active area AA and a secondary dam DAM2 adjacent to thepad area.

One or more dams DAM disposed in the dam area DA may suppress collapseof a liquefied organic encapsulation layer PCL toward the non-activearea NA to invade the pad area when the liquefied organic encapsulationlayer PCL is dropped in the active area AA.

This effect, as illustrated in FIG. 9, may be further enhanced when theprimary dam DAM1 and the secondary dam DAM2 are provided.

The primary dam DAM1 and/or the secondary dam DAM2 may be formed with asingle-layered or multi-layered structure. For example, the primary damDAM1 and/or the secondary dam DAM2 may be formed simultaneously with thesame material as at least one of the planarization layer PLN, the bankBANK, and the spacer SPC. In this case, the dam structure may be formedwithout having the mask adding process and increasing the cost.

Further, as illustrated in FIG. 9, the primary dam DAM1 and/or thesecondary dam DAM2 may be formed with a structure in which the firstinorganic encapsulation layer PAS1 and/or the second inorganicencapsulation layer PAS2 are laminated on the bank BANK.

Further, the organic encapsulation layer PCL including an organicmaterial, as illustrated in FIG. 9, may be located only on an innersurface of the primary dam DAM1.

In contrast, the organic encapsulation layer PCL including an organicmaterial may also be located above at least a part of the primary damDAM1 and the secondary dam DAM2. For example, the organic encapsulationlayer PCL may be located above the primary dam DAM1.

The second inorganic encapsulation layer PAS2 may be formed on thesubstrate SUB on which the organic encapsulation layer PCL is formed tocover an upper surface and a side surface of each of the organicencapsulation layer PCL and the first inorganic encapsulation layerPAS1. The second inorganic encapsulation layer PAS2 may reduce or blockthe permeation of the external moisture or oxygen into the firstinorganic encapsulation layer PAS1 and the organic encapsulation layerPCL. Such a second inorganic encapsulation layer PAS2 is formed of aninorganic insulating material, such as silicon nitride SiNx, siliconoxide SiOx, silicon oxynitride SiON, or aluminum oxide Al₂O₃.

A touch buffer layer T-BUF may be disposed on the encapsulation unitENCAP. The touch buffer layer T-BUF may be located between a touchsensor metal including X, Y-touch electrodes X-TE and Y-TE and X,Y-touch electrode connection lines X-CL and Y-CL and the secondelectrode E2 of the light emitting diode ED.

The touch buffer layer T-BUF may be designed to maintain a distancebetween the touch sensor metal and the second electrode E2 of the lightemitting diode ED to a predetermined minimum distance (for example, 1μm). Accordingly, a parasitic capacitance formed between the touchsensor metal and the second electrode E2 of the light emitting diode EDmay be reduced or suppressed and thus the touch sensitivity degradationdue to the parasitic capacitance may be suppressed.

The touch sensor metal including the X, Y-touch electrodes X-TE and Y-TEand the X, Y-touch electrode connection lines X-CL and Y-CL may bedisposed without providing the touch buffer layer T-BUF.

Further, the touch buffer layer T-BUF may suppress the permeation of achemical solution (a developer, an etchant, or the like) used for amanufacturing process of a touch sensor metal disposed on the touchbuffer layer T-BUF, moisture from the outside, or the like, into theemission layer EL including an organic material. By doing this, thetouch buffer layer T-BUF may suppress the damage of the emission layerEL which is vulnerable to the chemical solution or the moisture.

The touch buffer layer T-BUF may be formed of an organic insulatingmaterial which is formed at a low temperature of a predeterminedtemperature (for example, 100° C.) or lower to suppress the damage ofthe emission layer EL including an organic material which is vulnerableto a high temperature. The organic insulating material has a lowpermittivity of 1 to 3. For example, the touch buffer layer T-BUF may beformed of acrylic-, epoxy-, or siloxane-based material. The touch bufferlayer T-BUF which is formed of an organic insulating material and has aplanarization performance may suppress the damage of the encapsulationlayers PAS1, PCL, and PAS2 which configure the encapsulation unit ENCAPin accordance with the bending of the organic light emitting displaydevice. Further, the touch buffer layer T-BUF may suppress the crack ofthe touch sensor metal formed on the touch buffer layer T-BUF.

According to a mutual-capacitance-based touch sensor structure, theX-touch electrode line X-TEL and the Y-touch electrode line Y-TEL aredisposed on the touch buffer layer T-BUF and the X-touch electrode lineX-TEL and the Y-touch electrode line Y-TEL are disposed to intersecteach other.

The Y-touch electrode line Y-TEL may include a plurality of Y-touchelectrodes Y-TE and a plurality of Y-touch electrode connection linesY-CL which electrically connects between the plurality of Y-touchelectrodes Y-TE.

As illustrated in FIG. 9, the plurality of Y-touch electrodes Y-TE andthe plurality of Y-touch electrode connection lines Y-CL may be disposedon different layers with a touch insulating layer T-ILD therebetween.

The plurality of Y-touch electrodes Y-TE may be spaced apart from eachother along a y-axis direction with a predetermined distance. Each ofthe plurality of Y-touch electrodes Y-TE may be electrically connectedto another Y-touch electrode Y-TE which is adjacent in a y-axisdirection by means of the Y-touch electrode connection line Y-CL.

The Y-touch electrode connection line Y-CL is formed on the touch bufferlayer T-BUF and is exposed through a touch contact hole which passesthrough the touch insulating layer T-ILD to be electrically connected totwo Y-touch electrodes Y-TE adjacent in the y-axis.

The Y-touch electrode connection line Y-CL may be disposed so as tooverlap the bank BANK. Accordingly, the degradation of an aperture ratemay be suppressed by the Y-touch electrode connection line Y-CL.

The X-touch electrode line X-TEL may include a plurality of X-touchelectrodes X-TE and a plurality of X-touch electrode connection linesX-CL which electrically connects between the plurality of X-touchelectrodes X-TE.

The plurality of X-touch electrodes X-TE may be spaced apart from eachother along an x-axis direction with a predetermined distance on thetouch insulating layer T-ILD. Each of the plurality of X-touchelectrodes X-TE may be electrically connected to another X-touchelectrode X-TE which is adjacent in an x-axis direction by means of theX-touch electrode connection line X-CL.

The X-touch electrode connection line X-CL is disposed on the same planeas the X-touch electrode X-TE to be electrically connected to twoX-touch electrodes X-TE adjacent in the x-axis direction without havinga separate contact hole or to be formed as one body with two X-touchelectrodes X-TE adjacent in the x-axis direction.

The X-touch electrode connection line X-CL may be disposed so as tooverlap the bank BANK. Accordingly, the degradation of an aperture ratemay be suppressed by the X-touch electrode connection line X-CL.

In the meantime, the Y-touch electrode line Y-TEL may be electricallyconnected to the touch driving circuit TDC by means of the Y-touchrouting line Y-TL and the Y-touch pad Y-TP. Similarly, the X-touchelectrode line X-TEL may be electrically connected to the touch drivingcircuit TDC by means of the X-touch routing line X-TL and the X-touchpad X-TP.

A pad cover electrode which covers the X-touch pad X-TP and the Y-touchpad Y-TP may be further disposed.

The X-touch pad X-TP may be separately formed from the X-touch routingline X-TL or may be formed by extending the X-touch routing line X-TL.The Y-touch pad Y-TP may be separately formed from the Y-touch routingline Y-TL or may be formed by extending the Y-touch routing line Y-TL.

When the X-touch pad X-TP is formed by extending the X-touch routingline X-TL and the Y-touch pad Y-TP is formed by extending the Y-touchrouting line Y-TL, the X-touch pad X-TP, the X-touch routing line X-TL,the Y-touch pad Y-TP, and the Y-touch routing line Y-TL may beconfigured by the same first conductive material. Here, the firstconductive material may be formed with a single-layered or amultilayered structure using a metal having a strong corrosionresistance and acid resistance and having a good conductivity, such asAl, T1, Cu, or Mo.

For example, the X-touch pad X-TP, the X-touch routing line X-TL, theY-touch pad Y-TP, and the Y-touch routing line Y-TL formed of the firstconductive material may each be formed with a laminated triple-layeredstructure such as T1/Al/T1 or Mo/Al/Mo.

The pad cover electrode which covers X-touch pad X-TP and the Y-touchpad Y-TP may be configured with a second conductive material which isthe same material as the X and Y-touch electrodes X-TE and Y-TE. Here,the second conductive material may be formed by a transparent conductivematerial having strong corrosion resistance and acid resistance such asITO or IZO. Such a pad cover electrode is formed to be exposed by thetouch buffer layer T-BUF to be bonded with the touch driving circuit TDCor bonded with a circuit film in which the touch driving circuit TDC ismounted.

Here, a cover organic layer C-PAC is formed to cover the touch sensormetal to suppress the corrosion of the touch sensor metal due to themoisture from the outside. For example, the cover organic layer C-PACmay be formed of an organic insulating material or formed in the form ofa circular polarizing plate or an epoxy or acrylic film. Such a coverorganic layer C-PAC may not be provided on the encapsulation unit ENCAP.That is, the cover organic layer C-PAC may not be an essentialcomponent.

The Y-touch routing line Y-TL may be electrically connected to theY-touch electrode Y-TE through a touch routing line contact hole or maybe formed as one body with the Y-touch electrode Y-TE.

Such a Y-touch routing line Y-TL extends to the non-active area NA andpasses through an upper portion and a side surface of the encapsulationunit ENCAP and an upper portion and a side surface of the dam DAM to beelectrically connected to the Y-touch pad Y-TP. Accordingly, the Y-touchrouting line Y-TL may be electrically connected to the touch drivingcircuit TDC by means of the Y-touch pad Y-TP.

The Y-touch routing line Y-TL may transmit a touch sensing signal fromthe Y-touch electrode Y-TE to the touch driving circuit TDC or may besupplied with the touch driving signal from the touch driving circuitTDC to transmit the touch driving signal to the Y-touch electrode Y-TE.

The X-touch routing line X-TL may be electrically connected to theX-touch electrode X-TE through the touch routing line contact hole ormay be formed as one body with the X-touch electrode X-TE.

Such an X-touch routing line X-TL extends to the non-active area NA andpasses through an upper portion and a side surface of the encapsulationunit ENCAP and an upper portion and a side surface of the dam DAM to beelectrically connected to the X-touch pad X-TP. Accordingly, the X-touchrouting line X-TL may be electrically connected to the touch drivingcircuit TDC by means of the X-touch pad X-TP.

The X-touch routing line X-TL may be supplied with the touch drivingsignal from the touch driving circuit TDC to transmit the touch drivingsignal to the X-touch electrode X-TE or may transmit a touch sensingsignal from the X-touch electrode X-TE to the touch driving circuit TDC.

The arrangement of the X-touch routing line X-TL and the Y-touch routingline Y-TL may be changed in various manners depending on a panel designspecification.

An organic cover layer C-PAC may be disposed on the X-touch electrodeX-TE and the Y-touch electrode Y-TE. The organic cover layer C-PACextends before or after the dam DAM to be disposed also on the X-touchrouting line X-TL and the Y-touch routing line Y-TL.

In the meantime, the cross-sectional view of FIG. 9 conceptuallyillustrates a structure. Therefore, a position, a thickness, or a widthof each pattern (various layers or various electrodes) may varydepending on a watching direction or position. Further, additional layermay be further provided in addition to the plurality of illustratedlayers and some of the plurality of illustrated layers may be omitted orcombined. For example, the width of the bank BANK may be narrower thanthat in the drawing or a height of the dam DAM may be higher or lowerthan that in the drawing. Further, the cross-sectional view of FIG. 9illustrates a structure in which the touch electrode TE and the touchrouting line TL are disposed on the entire sub-pixel SP to illustrate anexample of a structure connected to the touch pad TP along an inclinedsurface of the touch routing line TL and the encapsulation unit ENCAP.However, when the touch electrode TE is a mesh type as described above,a hole of the touch electrode TE may be located on the emission area ofthe sub-pixel SP. A color filter CF may be further disposed on theencapsulation unit ENCAP and the color filter may be located on thetouch electrode TE or located between the encapsulation unit ENCAP andthe touch electrode TE.

FIGS. 10 and 11 are exemplary views illustrating a cross-sectionalstructure in which a color filter CF is included in a display panel DISPaccording to exemplary embodiments of the present disclosure.

Referring to FIGS. 10 and 11, when the touch panel TSP is embedded inthe display panel DISP and the display panel DISP is implemented as anorganic light emitting display panel, the touch panel TSP may be locatedon the encapsulation unit ENCAP in the display panel DISP. In otherwords, a touch sensor metal such as a plurality of touch electrodes TEand a plurality of touch routing lines TL may be disposed on theencapsulation unit ENCAP in the display panel DISP.

As described above, the touch electrode TE is formed on theencapsulation unit ENCAP so that the touch electrode TE may be formedwithout significantly affecting the display performance and formation ofdisplay-related layer.

In the meantime, referring to FIGS. 10 and 11, the second electrode E2which may serve as a cathode electrode of the organic light emittingdiode OLED may be located below the encapsulation unit ENCAP.

For example, the thickness of the encapsulation unit ENCAP may be 1 μmor larger.

As described above, the thickness of the encapsulation unit ENCAP isdesigned to be 1 μm or larger so that a parasitic capacitance formedbetween the second electrode E2 of the organic light emitting diode OLEDand the touch electrodes TE may be reduced. Accordingly, the degradationof the touch sensitivity due to the parasitic capacitance may besuppressed.

As described above, each of the plurality of touch electrodes TE may bepatterned such that the electrode metal EM has a mesh pattern having twoor more holes and each of two or more holes may correspond to one ormore sub-pixels or an emission area thereof as seen from a verticaldirection.

As described above, in plan view, the electrode metal EM of the touchelectrode TE is patterned such that an emission area of one or moresub-pixel is located so as to correspond to a position of each of two ormore holes in the area of the touch electrode TE. By doing this, theluminous efficiency of the display panel DISP may be increased.

As illustrated in FIGS. 10 and 11, in the display panel DISP, a blackmatrix BM may be disposed, and the color filter CF may be furtherdisposed.

A position of the black matrix BM may correspond to a position of theelectrode metal EM of the touch electrode TE.

A position of the plurality of color filters CF may correspond to theposition of the plurality of touch electrodes TE or the electrode metalME which forms the plurality of touch electrodes TE.

As described above, the plurality of color filters CF are located in aposition corresponding to a position of a plurality of open areas HOLEso that the luminous performance of the display panel DISP may beincreased.

A vertical position relationship between the plurality of color filtersCF and the plurality of touch electrodes TE will be described asfollows.

As illustrated in FIG. 10, a plurality of color filters CF and blackmatrixes BM may be located on the plurality of touch electrodes TE.

In this case, the plurality of color filters CF and black matrixes BMmay be located on an overcoating layer OC disposed on the plurality oftouch electrodes TE. Here, the overcoating layer OC may be the samelayer as the organic cover layer C-PAC of FIG. 9 or a different layerfrom the organic cover layer C-PAC.

Alternatively, as illustrated in FIG. 11, the plurality of color filtersCF and black matrixes BM may be located below the touch electrodes TE.

In this case, the plurality of touch electrodes TE may be located on theovercoating layer OC on the plurality of color filters CF and blackmatrixes BM. Here, the overcoating layer OC may be the same layer as thetouch buffer layer T-BUF or the touch insulating layer T-ILD of FIG. 9or a different layer. Alternatively, the touch buffer layer T-BUF or thetouch insulating layer T-ILD may be disposed separately from theovercoating layer OC.

As described above, a configuration for touch sensing may be disposed byadjusting a vertical position relationship between the touch electrodeTE and a configuration for display driving, without degrading thedisplay performance.

In the meantime, the display panel DISP according to exemplaryembodiments of the present disclosure may include a sensor such as acamera sensor or a proximity sensor. Such a sensor may be disposed inthe non-active area NA of the display panel DISP, but may also bedisposed in a partial area of the active area AA to reduce thenon-active area NA.

That is, depending on a type of the display panel DISP, there may be anarea in which an image is not displayed, but a sensor such as a camerasensor is disposed, in the active area AA.

FIG. 12 is a view illustrating an example of a structure in which holesare disposed in an active area AA of a display panel DISP according toexemplary embodiments of the present disclosure.

Referring to FIG. 12, the display panel DISP may include an active areaAA in which a sub-pixel SP and a touch electrode TE are disposed and anon-active area NA located at the outside of the active area AA.

The active area AA may include a first area A1 in which a sub-pixel SPis disposed and an image is displayed and a second area A2 in which asensor such as a camera sensor is disposed and images are not displayed.The first area A1 may be referred to as a pixel area and a second areaA2 may be referred to as a camera placement area.

The second area A2 may include an opening area A2-1 which passes throughthe substrate SUB and a boundary area A2-2 at the outside of the openingarea A2-1. Further, in the second area A2, at least one opening area maybe disposed and in the active area AA, at least one second area A2 maybe disposed.

For example, in the second area A2, a first opening area and a secondopening area which is spaced apart from the first opening area may bedisposed. That is, in the second area A2, a plurality of opening areasmay be disposed. Further, in the active area AA, a plurality of secondareas A2 may be disposed. That is, in the active area AA, a plurality ofcameras are disposed so that a plurality of second areas A2 may bedisposed.

FIG. 13 is a cross-sectional view schematically illustrating across-section taken along the line Y-Y′ of FIG. 12 according to oneembodiment.

In FIG. 13, the same components as those in FIG. 9 are included so thatthe description of the same components will be omitted and onlydifferent components from those of FIG. 9 will be described.

The substrate SUB corresponding to the opening area A2-1 and functionallayers there above are removed. Therefore, in the opening area A2-1, athrough hole and an image capturing device (not illustrated) are locatedin a vertical direction. In this case, the removing process may be apunching process using laser. The image capturing device may be locatedbelow the substrate SUB in the opening area A2-1.

In the first area A1, the first transistor T1, the light emitting diodeED, and various functional layers are located on the substrate SUB.

The substrate SUB supports various components of the light emittingdisplay device with an integrated touch screen. The substrate SUB may beformed of a transparent insulating material, for example, an insulatingmaterial such as glass or plastic.

The buffer layer BUF may be located on the substrate SUB. The bufferlayer BUF is a functional layer for protecting the thin film transistorTFT from impurities such as alkali ions which are leaked from thesubstrate SUB or layers there below. The buffer layer BUF may be formedof silicon oxide SiOx, silicon nitride SiNx, or multiple layers thereof.The buffer layer BUF may include a multi buffer and/or an active buffer.

The first transistor T1 is located on the substrate SUB or the bufferlayer BUF. The first transistor T1 includes a first node electrode NE1corresponding to a gate electrode, a second node electrode NE2corresponding to a source electrode or a drain electrode, a third nodeelectrode NE3 corresponding to a drain electrode or a source electrode,a semiconductor layer SEMI, and the like.

The semiconductor layer SEMI may be made of poly silicon p-Si. In thiscase, a predetermined region may be doped with impurities. Further, thesemiconductor layer SEMI may be made of amorphous silicon a-Si orvarious organic semiconductor materials such as pentacene. Moreover, thesemiconductor layer SEMI may be made of oxide.

The gate electrode NE1 may be formed of various conductive materials,for example, magnesium Mg, aluminum Al, nickel Ni, chrome Cr, molybdenumMo, tungsten W, gold Au, or an alloy thereof.

The gate insulating layer GI and the interlayer insulating layer ILD maybe formed of an insulating material such as silicon oxide SiOx orsilicon nitride SiNx, or an insulating organic material. The gateinsulating layer GI and the interlayer insulating layer ILD areselectively removed to form a contact hole through which the source anddrain regions are exposed.

The source and drain electrodes NE2 and NE3 may be formed on the gateinsulating layer GI or the interlayer insulating layer ILD as a singlelayer or multiple layers. If necessary, a passivation layer INS which isconfigured with an inorganic insulating material may cover the sourceand drain electrodes NE2 and NE3.

The planarization layer PLN may be located on the first transistor T1.The planarization layer PLN protects the first transistor T1 andplanarizes an upper portion thereof. The planarization layer PLN may beconfigured to have various shapes. The planarization layer PLN may bemodified in various ways, for example, the planarization layer may beformed of an organic insulating layer such as benzocyclobutene (BCB) oracryl, or an inorganic insulating layer such as a silicon nitride layerSiNx or a silicon oxide layer SiOx or may be formed of a single layer ordouble layers or multiple layers.

The light emitting diode ED may include a first electrode E1corresponding to an anode electrode (or a cathode electrode), anemission layer EL formed on the first electrode E1, and a secondelectrode E2 corresponding to a cathode electrode (or an anodeelectrode) formed on the emission layer EL.

The first electrode E1 is electrically connected to the second nodeelectrode NE2 of the first transistor T1 which is exposed through apixel contact hole which passes through the planarization layer PLN.

The bank BANK is formed in a remaining area except for an emission area.Therefore, the bank BANK has a bank hole which exposes the firstelectrode E1 corresponding to the emission area. The bank BANK may beformed of an organic material such as polyimide, benzocyclobutene seriesresin, or polyacrylate. A spacer SPC may be formed on the bank BANK. Thespacer SPC may serve to suppress the contact of the mask used for asubsequent process of manufacturing an emission layer EL with alaminated material below the spacer SPC. The spacer SPC may bemanufactured simultaneously with the bank BANK using a half-tone maskduring the manufacturing of the bank BANK. Accordingly, the spacer SPCmay be formed of the same material as the bank BANK and formed as onebody with the bank BANK.

The above-described spacer SPC may be disposed anywhere above the bankBANK. For example, the spacer SPC may be disposed on the entire upperportion of the bank BANK and in this case, the width of the spacer SPCmay be smaller than that of the bank BANK. Further, the spacer SPC maybe disposed above the bank BANK with the width larger than that of thebank BANK and in this case, the spacer SPC may partially overlap theemission area. Further, the spacer SPC may be disposed above a part ofthe bank BANK. For example, the spacer SPC may be disposed on the entirebank BANK which encloses one sub-pixel or may be disposed to be adjacentwith one sub-pixel therebetween. Further, the spacers SPC may bedisposed to be adjacent with at least two sub-pixels therebetween.

The emission layer EL is located on the first electrode E1. The emissionlayer EL may include an electron injection layer, an electron transportlayer, an emission layer, a hole transport layer, a hole injectionlayer, and the like. The above-described layers may be formed on theentire first area A1 or only in a partial area of the first area A1depending on the necessity or the process. The emission layer EL may beconfigured with a single emission layer structure which emits singlelight or may be configured with a structure which is configured by aplurality of emission layers to emit white light. The emission layer ELmay not be formed in the opening area A2-1 using a disconnectedstructure illustrated in FIG. 13.

The second electrode E2 is located on the emission layer EL. When thelight emitting display device with an integrated touch screen is a topemission type, the second electrode E2 is formed of a transparentconductive material such as indium tin oxide ITO or indium zinc oxideIZO to emit light generated in the emission layer EL to an upper portionof the second electrode E2. The second electrode E2 may be a cathode ofthe light emitting diode ED.

The encapsulation unit ENCAP blocks or at least reduces permeation ofmoisture or oxygen into the light emitting diode ED which is vulnerableto the moisture or oxygen from the outside.

Such an encapsulation unit ENCAP may be formed as one layer or asillustrated in FIG. 9, may be formed by a plurality of layers PAS1, PCL,and PAS2.

For example, when the encapsulation unit ENCAP is formed of a pluralityof layers PAS1, PCL, and PAS2, the encapsulation unit ENCAP may includeone or more inorganic encapsulation layers PAS1 and PAS2 and one or moreorganic encapsulation layers PCL. As a specific example, theencapsulation unit ENCAP may have a structure in which a first inorganicencapsulation layer PAS1, an organic encapsulation layer PCL, and asecond inorganic encapsulation layer PAS2 are sequentially laminated.

Here, the organic encapsulation layer PCL may further include at leastone organic encapsulation layer or at least one inorganic encapsulationlayer.

The first inorganic encapsulation layer PAS1 is formed on the substrateSUB on which the second electrode E2 corresponding to the cathodeelectrode is formed so as to be most adjacent to the light emittingdiode ED. The first inorganic encapsulation layer PAS1 is formed of aninorganic insulating material on which low-temperature deposition isallowed, such as silicon nitride SiNx, silicon oxide SiOx, siliconoxynitride SiON, or aluminum oxide Al₂O₃. Since the first inorganicencapsulation layer PAS1 is deposited in a low temperature atmosphere,the first inorganic encapsulation layer PAS1 may suppress the damage ofthe emission layer EL including an organic material which is vulnerableto a high temperature atmosphere during a deposition process.

The organic encapsulation layer PCL is formed to have a smaller areathan the first inorganic encapsulation layer PAS1 and in this case, theorganic encapsulation layer PCL may be formed to expose both ends of thefirst inorganic encapsulation layer PAS1. The organic encapsulationlayer PCL may serve as a buffer which relieves a stress between layersdue to the bending of the light emitting display device with anintegrated touch screen which is an organic light emitting displaydevice and also serve to enhance a planarization performance. Theorganic encapsulation layer PCL is formed of an organic insulatingmaterial, such as acrylic resin, epoxy resin, polyimide, polyethylene,or silicon oxy carbon SiOC.

A touch buffer layer T-BUF may be disposed on the encapsulation unitENCAP. The touch buffer layer T-BUF may be located between a touchsensor metal including X, Y-touch electrodes X-TE and Y-TE and X,Y-touch electrode connection lines X-CL and Y-CL and the secondelectrode E2 of the light emitting diode ED.

The touch buffer layer T-BUF may be designed to maintain a distancebetween the touch sensor metal and the second electrode E2 of the lightemitting diode ED to a predetermined minimum distance (for example, 1μm). Accordingly, a parasitic capacitance formed between the touchsensor metal and the second electrode E2 of the light emitting diode EDmay be reduced or suppressed and thus the touch sensitivity degradationdue to the parasitic capacitance may be suppressed.

The touch sensor metal including X, Y-touch electrodes X-TE and Y-TE andX, Y-touch electrode connection lines X-CL and Y-CL may be disposedwithout providing the touch buffer layer T-BUF.

Further, the touch buffer layer T-BUF may suppress the permeation of achemical solution (a developer, an etchant, or the like) used for amanufacturing process of a touch sensor metal disposed on the touchbuffer layer T-BUF, moisture from the outside, or the like, into theemission layer EL including an organic material. By doing this, thetouch buffer layer T-BUF may suppress the damage of the emission layerEL which is vulnerable to the chemical solution or the moisture.

The touch buffer layer T-BUF may be formed of an organic insulatingmaterial which is formed at a low temperature of a predeterminedtemperature (for example, 100° C.) or lower to suppress the damage ofthe emission layer EL including an organic material which is vulnerableto a high temperature. The organic insulating material has a lowpermittivity of 1 to 3. For example, the touch buffer layer T-BUF may beformed of acrylic-, epoxy-, or siloxane-based material. The touch bufferlayer T-BUF which is formed of an organic insulating material and has aplanarization performance may suppress the damage of the encapsulationlayers PAS1, PCL, and PAS2 which configure the encapsulation unit ENCAPin accordance with the bending of the organic light emitting displaydevice. Further, the touch buffer layer T-BUF may suppress the crack ofthe touch sensor metal formed on the touch buffer layer T-BUF.

The X-touch electrode line X-TEL and the Y-touch electrode line Y-TELare disposed above the first area A1 in which the sub-pixels SP aredisposed and the image is displayed, as illustrated in FIG. 9, above thetouch buffer layer T-BUF, and the X-touch electrode line X-TEL and theY-touch electrode line Y-TEL are disposed to intersect each other.

The Y-touch electrode line Y-TEL may include a plurality of Y-touchelectrode Y-TE and a plurality of Y-touch electrode connection linesY-CL which electrically connects between the plurality of Y-touchelectrodes Y-TE.

A cover organic layer C-PAC may be formed above the touch sensor metalincluding the X-touch electrode line X-TEL and the Y-touch electrodeline Y-TEL so as to cover the touch sensor metal. The cover organiclayer C-PAC may suppress or at least reduce the corrosion of the touchsensor metal due to the moisture from the outside. For example, thecover organic layer C-PAC may be formed of an organic insulatingmaterial or formed in the form of a circular polarizing plate or anepoxy or acrylic film.

A boundary area A2-2 does not include the light emitting diode ED, butincludes a bypass line (not illustrated), a blocking structure DAM, acut structure CS, and the like to cut the interaction between the firstarea A1 and the opening area A2-1.

The bypass line is configured such that various wiring lines which passthrough the opening area A2-1 in a horizontal direction or a verticaldirection extend to bypass the opening area A2-1. The bypass line may beconfigured on the same layer as the original line or a different layertherefrom.

The blocking structure DAM is provided to suppress or at least reducethe overflowing of the organic encapsulation layer PCL of theencapsulation unit ENCAP to the opening area A2-1. Even though in FIG.13, it is illustrated that the flow of the organic encapsulation layerPCL is blocked by a blocking structure DAM1 which is disposed insiderthan the other blocking structure DAM2, between two blocking structures,the organic encapsulation layer PCL may pass over an inner blockingstructure, but may be blocked by an outer blocking structure.

The cut structure CS is provided to disconnect the connection of theemission layer EL. When the emission layer EL is exposed to the outside,it may serve as a permeation path of the moisture. In the opening areaA2-1, the emission layer EL may be exposed to the outside so that thecut structure CS is necessary.

In the boundary area A2-2 in which the light emitting diode ED is notformed, the touch sensor metal may not be disposed. In the boundary areaA2-2 in which the touch sensor metal is not disposed, a touchplanarization layer T-PLN may be disposed above the touch buffer layerT-BUF. The touch planarization layer T-PLN may serve to protect theemission layer EL which is cut by the cut structure CS in the boundaryarea A2-2 from the outside. The touch planarization layer T-PLN isformed of an organic insulating material, such as acrylic resin, epoxyresin, polyimide, polyethylene, or silicon oxy carbon SiOC.

A cover organic layer C-PAC which extends from the pixel area A1 may beformed above the touch planarization layer T-PLN.

FIG. 14 is a partial cross-sectional view of a display panel DISPaccording to another exemplary embodiments of the present disclosure,taken along the line X-X′ of FIG. 8.

Referring to FIG. 14, in order to display colors, the organic lightemitting display device forms sub-pixels to be divided into red, green,and blue sub-pixels and forms organic light emitting layers having acolor of a corresponding sub-pixel in each sub-pixel. Generally, adeposition method using a shadow mask is used for the organic lightemitting layer.

A large size shadow mask has a problem in that a sagging phenomenon iscaused due to its load and thus, a yield is lowered when the shadow maskis used several times. Therefore, organic layers other than the emissionlayer may be commonly formed in each sub-pixel without beingdisconnected and without using the shadow mask.

However, in the structure which applies a common layer, in recent years,due to a common layer which is commonly provided for the sub-pixels,current flows to a side portion through a common layer which iscontinued on a plane so that a side leakage current problem is observed.

In order to suppress or at least reduce the side leakage current, areverse spacer (not illustrated) having a reverse tapered shape may beprovided above the bank BANK. When the emission layer EL which isdeposited after forming the reverse spacer RAS is deposited, theemission layer is satisfactorily stacked on a flat portion due to thestrong straightness. Specifically, however, when the emission layerencounters a structure in which a diameter of a lower portion is smallerthan a diameter of an upper portion, like a reverse taper, the emissionlayer is not stacked on the side portion or partially disconnected tocause an isolated portion. In the meantime, the second electrode E2provided above the emission layer EL has a metal component and israndomly deposited due to scattered reflection of the particles ascompared with an organic material to have a good coverage. Therefore,the second electrode is also stacked on the side portion of the reversespacer so that the isolated portion does not occur.

In the meantime, when a fine metal mask (for example, included in thecase of the emission layer which is selectively formed for everysub-pixel) used during the process of depositing the emission layer ELis sagged due to its load, the fine metal mask serves as a primarysupport so as not to be in contact with the bank BANK or the reversespacer. Therefore, the fine metal mask may be formed to be higher thanthe reverse spacer RAS.

That is, differently from the exemplary embodiment of FIG. 9, a heightof the spacer SPC above the bank BANK in the active area AA and a heightof the dam DAM of the non-active area NA including the same layer as thespacer SPC may be increased. As a result, as illustrated in FIG. 14, theY-touch routing line Y-TL which passes through an area where the firstdam DAM1 and the second dam DAM2 are formed is shorted due to a highstep caused by the dam DAM. Therefore, the signal of the touch electrodeis not transmitted to the touch driving circuit TDC so that there may bea problem in that a touch performance is lowered.

Accordingly, the inventors of the present disclosure recognized that atouch signal is cut due to the high step caused by the dam DAM disposedin the non-active area NA in a structure in which a touch panel TSP isembedded in the display panel DISP and an opening area for disposing acamera is included in the active area AA. Therefore, the inventorsdevised a new structure for connecting a touch routing line formed abovethe dam DAM.

FIG. 15 is a plan view illustrating a light emitting display device withan integrated touch screen according to an exemplary embodiment of thepresent disclosure. FIG. 16 is a view illustrating a cross-section takenalong the line Z-Z′ of FIG. 15 according to one embodiment.

Referring to FIGS. 15, and 16, the display panel DISP may include anactive area AA in which a sub-pixel SP and a touch electrode TE aredisposed and a non-active area NA located at the outside of the activearea AA. The display panel DISP includes the same components andlamination structure as the display panel DISP of FIG. 3 as describedabove, so that a detailed description will be omitted.

A buffer layer BUF having a single-layered or a multi-layered structuremay be disposed on a substrate SUB. The substrate SUB may be formed of aflexible material. When the substrate SUB is formed of a material suchas polyimide, the buffer layer BUF may be formed of a single layerconfigured by any one of an inorganic material and an organic materialto suppress the damage of the light emitting diode caused by impuritiessuch as alkali ions leaked from the substrate SUB during a subsequentprocess. In contrast, the buffer layer BUF may be formed of amulti-layer formed of different inorganic materials. Further, the bufferlayer BUF may be formed of a multi-layer formed of an organic materiallayer and an inorganic material layer. The inorganic material mayinclude any one of a silicon oxide layer SiOx, a silicon nitride layerSiNx, and a silicon oxy nitride layer SiON. The organic material mayinclude any one of polyimide, benzocyclobutene series resin, andpolyacrylate. An example of polyacrylate may include photo acryl. Thefirst transistor T1 which is a driving transistor is disposed in eachsub-pixel SP in the active area AA on the substrate SUB.

The first transistor T1 includes a first node electrode NE1corresponding to a gate electrode, a second node electrode NE2corresponding to a source electrode or a drain electrode, a third nodeelectrode NE3 corresponding to a drain electrode or a source electrode,and a semiconductor layer SEMI.

The first node electrode NE1 and the semiconductor layer SEMI mayoverlap with a gate insulating layer GI therebetween. The second nodeelectrode NE2 is formed on an interlayer insulating layer ILD to be incontact with one side of the semiconductor layer SEMI and the third nodeelectrode NE3 is formed on the interlayer insulating layer ILD to be incontact with the other side of the semiconductor layer SEM1.

An insulating layer INS which covers the second node electrode NE2, thethird node electrode NE3, and a data line may be disposed. Theinsulating layer INS may be formed of a single layer formed of aninorganic material or a multi-layer formed of different inorganicmaterials. For example, the insulating layer INS may be formed of asingle layer of any one of a silicon oxide layer SiOx, a silicon nitridelayer SiNx, and a silicon oxy nitride layer SiON or a multi-layerthereof.

A planarization layer PLN may be disposed on the insulating layer INS.The planarization layer PLN is formed to relieve a step of a lowerstructure and protect the lower structure and is formed of an organicmaterial layer. The organic material may include any one of polyimide,benzocyclobutene series resin, and polyacrylate. An example ofpolyacrylate may include photo acryl.

The light emitting diode ED may include a first electrode E1corresponding to an anode electrode (or a cathode electrode), anemission layer EL formed on the first electrode E1, and a secondelectrode E2 corresponding to a cathode electrode (or an anodeelectrode) formed on the emission layer EL.

The first electrode E1 is electrically connected to the second nodeelectrode NE2 of the first transistor T1 which is exposed through apixel contact hole which passes through the planarization layer PLN.

A bank BANK having an opening which exposes the first electrode E1 maybe formed on the planarization layer PLN. The opening of the bank BANKmay be an area which defines an emission area. The bank BANK may beformed of an organic material such as polyimide, benzocyclobutene seriesresin, or polyacrylate. A spacer SPC may be formed on the bank BANK. Thespacer SPC may serve to suppress the contact of the mask used for asubsequent process of manufacturing an emission layer EL with alaminated material below the spacer SPC. The spacer SPC may bemanufactured simultaneously with the bank BANK using a half-tone maskduring the manufacturing of the bank BANK. Accordingly, the spacer SPCmay be formed of the same material as the bank BANK and formed as onebody with the bank BANK.

The above-described spacer SPC may be disposed anywhere above the bankBANK. For example, the spacer SPC may be disposed on the entire upperportion of the bank BANK and in this case, the width of the spacer SPCmay be smaller than that of the bank BANK. Further, the spacer SPC maybe disposed above the bank BANK with the width larger than that of thebank BANK and in this case, the spacer SPC may partially overlap theemission area. Further, the spacer SPC may be disposed above a part ofthe bank BANK. For example, the spacer SPC may be disposed on the entirebank BANK which encloses one sub-pixel or may be disposed to be adjacentwith one sub-pixel therebetween. Further, the spacers SPC may bedisposed to be adjacent with at least two sub-pixels therebetween.

The emission layer EL is formed on the first electrode E1 of theemission area provided by the bank BANK. The emission layer EL may beformed by laminating a hole-related layer, an emission layer, and anelectron-related layer on the first electrode E1 in this order or in areverse order. The second electrode E2 is disposed to be opposite to thefirst electrode E1 with the emission layer EL therebetween.

The encapsulation unit ENCAP blocks moisture or oxygen from beingpermeated into the light emitting diode ED which is vulnerable to themoisture or oxygen from the outside.

Such an encapsulation unit ENCAP may be formed as one layer or asillustrated in FIG. 9, may be formed by a plurality of layers PAS1, PCL,and PAS2.

For example, when the encapsulation unit ENCAP is formed of a pluralityof layers PAS1, PCL, and PAS2, the encapsulation unit ENCAP may includeone or more inorganic encapsulation layers PAS1 and PAS2 and one or moreorganic encapsulation layer PCL. As a specific example, theencapsulation unit ENCAP may have a structure in which a first inorganicencapsulation layer PAS1, an organic encapsulation layer PCL, and asecond inorganic encapsulation layer PAS2 are sequentially laminated.

Here, the organic encapsulation layer PCL may further include at leastone organic encapsulation layer or at least one inorganic encapsulationlayer.

The first inorganic encapsulation layer PAS1 is formed on the substrateSUB on which the second electrode E2 corresponding to the cathodeelectrode is formed so as to be most adjacent to the light emittingdiode ED. The first inorganic encapsulation layer PAS1 is formed of aninorganic insulating material on which low-temperature deposition isallowed, such as silicon nitride SiNx, silicon oxide SiOx, siliconoxynitride SiON, or aluminum oxide Al₂O₃. Since the first inorganicencapsulation layer PAS1 is deposited in a low temperature atmosphere,the first inorganic encapsulation layer PAS1 may suppress the damage ofthe emission layer EL including an organic material which is vulnerableto a high temperature atmosphere during a deposition process.

The organic encapsulation layer PCL is formed to have a smaller areathan the first inorganic encapsulation layer PAS1 and in this case, theorganic encapsulation layer PCL may be formed to expose both ends of thefirst inorganic encapsulation layer PAS1. The organic encapsulationlayer PCL may serve as a buffer which relieves a stress between layersdue to the bending of the light emitting display device with anintegrated touch screen which is an organic light emitting displaydevice and also serve to enhance a planarization performance. Theorganic encapsulation layer PCL is formed of an organic insulatingmaterial, such as acrylic resin, epoxy resin, polyimide, polyethylene,or silicon oxy carbon SiOC.

The second inorganic encapsulation layer PAS2 may be formed on thesubstrate SUB on which the organic encapsulation layer PCL is formed tocover an upper surface and a side surface of each of the organicencapsulation layer PCL and the first inorganic encapsulation layerPAS1. The second inorganic encapsulation layer PAS2 may reduce or blockthe permeation of the external moisture or oxygen into the firstinorganic encapsulation layer PAS1 and the organic encapsulation layerPCL. The second inorganic encapsulation layer PAS2 is formed of aninorganic insulating material, such as silicon nitride SiNx, siliconoxide SiOx, silicon oxynitride SiON, or aluminum oxide Al₂O₃.

In the non-active area NA, a first dam DAM1 and a second dam DAM2 may bedisposed to enclose the active area AA. The first dam DAM1 is located tobe adjacent to the active area AA and the second dam DAM2 may be locatedfarther from the active area AA than the first dam DAM1. As described indetail in FIG. 2, the dam DAM may function to suppress the overflowingof the organic encapsulation layer PCL included in the encapsulationunit ENCAP to the outside. Therefore, the dam DAM may be referred to asa blocking structure. That is, the first dam DAM1 and the second damDAM2 may be referred to as a first blocking structure and a secondblocking structure, respectively.

The first blocking structure DAM1 and/or the second blocking structureDAM2 may be formed with a single-layered or multi-layered structure. Forexample, the first blocking structure DAM1 may include sequentiallystacked blocking structures DM1, DM2 and DM3, and the second blockingstructure DAM2 may include sequentially stacked blocking structuresDAM2-1, DAM2-2 and DAM2-3. For example, the first blocking structureDAM1 and/or the second blocking structure DAM2 may be formed to besequentially laminated with the same material as the planarization layerPLN, the bank BANK, and the spacer SPC.

The blocking structure DAM serves to suppress or at least reduce theoverflowing of the organic encapsulation layer PCL so that the firstblocking structure DAM1 adjacent to the active area AA and the secondblocking structure DAM2 located to be more outside may not be formedwith the same laminated structure. That is, the organic encapsulationlayer PCL is primarily blocked by the first blocking structure DAM1 sothat the second blocking structure DAM2 may be formed to be lower thanthe first blocking structure DAM1.

A touch buffer layer T-BUF may be disposed above the encapsulation unitENCAP. The touch buffer layer T-BUF may be located between a touchsensor metal including X, Y-touch electrodes X-TE and Y-TE and X,Y-touch electrode connection lines X-CL and Y-CL and the secondelectrode E2 of the light emitting diode ED.

The touch buffer layer T-BUF may be designed to maintain a distancebetween the touch sensor metal and the second electrode E2 of the lightemitting diode ED to a predetermined minimum distance (for example, 1μm). Accordingly, a parasitic capacitance formed between the touchsensor metal and the second electrode E2 of the light emitting diode EDmay be reduced or suppressed and thus the touch sensitivity degradationdue to the parasitic capacitance may be suppressed.

In the active area AA, the X-touch electrode line X-TEL and the Y-touchelectrode line Y-TEL are disposed on the touch buffer layer T-BUF andthe X-touch electrode line X-TEL and the Y-touch electrode line Y-TELare disposed to intersect each other.

The Y-touch electrode line Y-TEL may include a plurality of Y-touchelectrode Y-TE and a plurality of Y-touch electrode connection linesY-CL which electrically connects between the plurality of Y-touchelectrodes Y-TE.

The plurality of Y-touch electrodes Y-TE and the plurality of Y-touchelectrode connection lines Y-CL may be disposed on different layers witha touch insulating layer T-ILD therebetween.

The plurality of Y-touch electrodes Y-TE may be spaced apart from eachother along a y-axis direction with a predetermined distance. Each ofthe Y-touch electrodes Y-TE may be electrically connected to anotherY-touch electrode Y-TE which is adjacent in a y-axis direction by meansof the Y-touch electrode connection line Y-CL.

The Y-touch electrode connection line Y-CL is formed on the touch bufferlayer T-BUF and is exposed through a touch contact hole which passesthrough the touch insulating layer T-ILD to be electrically connected totwo Y-touch electrodes Y-TE adjacent in the y-axis.

The X-touch electrode line X-TEL may include a plurality of X-touchelectrodes X-TE and a plurality of X-touch electrode connection linesX-CL which electrically connects between the plurality of X-touchelectrodes X-TE.

The plurality of X-touch electrodes X-TE may be spaced apart from eachother along an x-axis direction with a predetermined distance on thetouch insulating layer T-ILD. Each of the plurality of X-touchelectrodes X-TE may be electrically connected to another X-touchelectrode X-TE which is adjacent in an x-axis direction by means of theX-touch electrode connection line X-CL.

The X-touch electrode connection line X-CL is disposed on the same planeas the X-touch electrode X-TE to be electrically connected to twoX-touch electrodes X-TE adjacent in the x-axis direction without havinga separate contact hole or formed as one body with two X-touchelectrodes X-TE adjacent in the x-axis direction.

In the meantime, the Y-touch electrode line Y-TEL may be electricallyconnected to the touch driving circuit TDC by means of the Y-touchrouting line Y-TL and the Y-touch pad Y-TP disposed in the non-activearea NA. Similarly, the X-touch electrode line X-TEL may be electricallyconnected to the touch driving circuit TDC by means of the X-touchrouting line X-TL and the X-touch pad X-TP disposed in the non-activearea NA.

A step compensation layer SCL may be disposed between the touch bufferlayer T-BUF and the X-touch routing line X-TL and the Y-touch routingline Y-TL. The step compensation layer SCL may be formed to overlap thefirst and second blocking structures. The high step which is generatedby the increase in the overall height of the blocking structure DAMcaused by the increased height of the spacer SPC may be relieved bydisposing the step compensation layer SCL. The step compensation layerSCL may be disposed on the same plane as the touch planarization layerT-PLN which is disposed in the boundary area A2-2 in the active area AAdescribed above in FIG. 12 in which the light emitting diode ED is notformed and may be formed of the same material as the touch planarizationlayer T-PLN. That is, when the touch planarization layer T-PLN is formedin the boundary area A2-2, the step compensation layer SCL may besimultaneously formed to overlap the blocking structure DAM in thenon-active area NA. In this case, the step compensation layer SCL may beformed without having the mask adding process and increasing the cost.

An area where the step compensation layer SCL is disposed may varydepending on the shape of the first and second blocking structures. Forexample, when the height of the second blocking structure is formed tobe smaller than the height of the first blocking structure so that thestep is steeply generated, the step compensation layer may overlap apart of the first and second blocking structures. Further, asillustrated in FIG. 17, when the heights of the first and secondblocking structures are the same, the step compensation layer may beformed to cover the entire first and second blocking structures.

Here, a cover organic layer C-PAC may be formed to cover the X and Ytouch electrodes X-TE and Y-TE and the touch routing line TL to suppressthe corrosion of the touch electrode and the touch routing line TL dueto the external moisture, or the like. For example, the cover organiclayer C-PAC may be formed of an organic insulating material or formed inthe form of a circular polarizing plate or an epoxy or acrylic film. Forexample, the cover organic layer C-PAC may be formed of the samematerial as the touch planarization layer T-PLN and the stepcompensation layer SCL.

As described above, according to the present disclosure, the steppreventive layer SCL formed of the same material as the touchplanarization layer T-PLN is formed in a high step area in which thetouch routing line and the blocking structure overlap to relieve thestep caused by the blocking structure DAM. Therefore, the disconnectionof the touch routing line TL which passes through the blocking structureDAM may be suppressed.

As described above, the light emitting display device with an integratedtouch screen according to an example of the present disclosure forms astep compensation layer SCL formed of the same material as the touchplanarization layer T-PLN in a high step area in which the touch routingline TL and the blocking structure DAM overlap. Therefore, the stepcaused by the blocking structure DAM is relieved to suppress thedisconnection of the touch routing line TL which passes through theblocking structure DAM. Accordingly, a display device with an integratedtouch screen which implements a stable touch performance may beprovided.

A light emitting display device with an integrated touch screenaccording to various exemplary embodiments of the present disclosurewill be described as follows.

A light emitting display device with an integrated touch screenaccording to an exemplary embodiment of the present disclosure includesa substrate SUB including a display area (or an active area) AA in whicha plurality of pixels is disposed and a non-display area (or anon-active area) NA around the display area AA. The light emittingdisplay device may include an opening area A2-1 which is located insidethe display area AA and passes through the substrate SUB and a boundaryarea A2-2 disposed to be in contact with the outside of the opening areaA2-1. In the display area AA, there is a pixel area A1 excluding theopening area A2-1 and the boundary area A2-2. The light emitting displaydevice may include an encapsulation unit ENCAP which covers the pixelarea A1, the non-display area NA, and the boundary area A2-2. The lightemitting display device may include a plurality of first touchelectrodes X-TE which is disposed on the encapsulation unit ENCAP of thepixel area A1 and extends in a first direction and a plurality of secondtouch electrodes Y-TE which extends in a second direction. The lightemitting display device may include first and second blocking structuresDAM1 and DAM2 which are disposed in the non-display area NA and areconfigured to enclose the display area AA. A first touch routing lineX-TL which is disposed on the first and second blocking structures DAM1and DAM2 and is connected to the first touch electrode X-TE may beincluded. A second touch routing line Y-TL which is disposed on thefirst and second blocking structures DAM1 and DAM2 and is connected tothe second touch electrode Y-TE may be included. The light emittingdisplay device may include an organic cover layer C-PAC which covers thefirst touch routing line X-TL and the second routing line Y-TL and atouch buffer layer T-BUF which covers the encapsulation unit ENCAP. Thelight emitting display device may include a step compensation layer SCLlocated between the touch buffer layer T-BUF and the first touch routingline X-TL and the second routing line Y-TL and the step compensationlayer SCL may be disposed to overlap the first and second blockingstructures DAM1 and DAM2.

For example, the encapsulation unit ENCAP may be configured by at leastthree layers to suppress or at least reduce the permeation of themoisture or oxygen into the pixel area. For example, the encapsulationunit may be formed by two inorganic encapsulation layers PAS1 and PAS2and one organic encapsulation layer PCL.

The organic encapsulation layer PCL planarizes a surface of theinorganic encapsulation layer PAS1 below the organic encapsulation layerPCL and the height thereof may be decreased toward the blockingstructure DAM from the display area AA.

For example, in the display area AA, a light emitting diode ED, a thinfilm transistor which is connected to the light emitting diode, aplanarization layer PLN disposed on the thin film transistor, a bankBANK which exposes an anode electrode E1 of the light emitting diode,and a spacer SPC above the bank may be further included. Each of thefirst and second blocking structures DAM1 and DAM2 may be formed of thesame material as at least one of the planarization layer PLN, the bankBANK, and the spacer SPC.

For example, the step compensation layer SCL may be in contact with thetouch buffer layer T-BUF and may overlap a part of the first and secondblocking structures DAM1 and DAM2. The step compensation layer SCL maybe formed of the same material as the organic encapsulation layer PCLincluded in the encapsulation unit ENCAP.

For example, the light emitting display device may further include atouch planarization layer T-PLN which covers the touch buffer layerT-BUF of the boundary area A2-2 and the touch buffer layer T-BUF may bedisposed on the same plane as the step compensation layer SCL and may beformed of the same material as the step compensation layer.

Further, a light emitting display device with an integrated touch screenaccording to an exemplary embodiment of the present disclosure includesa substrate SUB including a display area AA in which a plurality ofpixels are disposed and a non-display area NA around the display areaAA. A light emitting diode ED may be disposed in the display area AA. Anencapsulation unit ENCAP which covers the display area AA and thenon-display area NA is disposed and a touch electrode line TEL may belocated on the encapsulation unit ENCAP. A touch routing line TLconnected to the touch electrode line TEL may be formed in thenon-display area NA. An organic cover layer C-PAC which is formed abovethe touch electrode line TEL and the touch routing line TL and coversthe touch electrode line TEL and the touch routing line TL may beincluded. A plurality of blocking structures DAM which are disposed inthe non-display area NA and are configured to enclose the display areaAA and a step compensation layer SCL between the encapsulation unitENCAP and the touch routing line TL may be included. The stepcompensation layer SCL reduces the step due to the plurality of blockingstructures DAM to reduce the irregularities of the surface of theencapsulation unit ENCAP.

For example, an opening area A2-1 which is located inside the displayarea AA and passes through the substrate SUB and a boundary area A2-2disposed to be in contact with the outside of the opening area A2-1 maybe further included. In the boundary area A2-2, a touch planarizationlayer T-PLN which covers the encapsulation unit ENCAP may be disposed.Here, the touch planarization layer T-PLN and the step compensationlayer SCL may be disposed on the same plane and formed of the samematerial.

For example, a light emitting diode ED, a thin film transistor which isconnected to the light emitting diode, a planarization layer PLNdisposed on the thin film transistor, a bank BANK which exposes an anodeelectrode E1 of the light emitting diode, and a spacer SPC above thebank BANK may be further included. Each of the plurality of blockingstructures DAM may be formed of the same material as at least one of theplanarization layer PLN, the bank BANK, and the spacer SPC.

A touch buffer layer T-BUF between the step compensation layer SCL andthe encapsulation unit ENCAP may be further included.

For example, the plurality of blocking structures DAM may include firstand second blocking structures DAM1 and DAM2 and the step compensationlayer SCL is in contact with the touch buffer layer T-BUF and mayoverlap a part of the first and second blocking structures DAM1 andDAM2.

For example, the plurality of blocking structures DAM may include firstand second blocking structures DAM1 and DAM2 and the step compensationlayer SCL is in contact with the touch buffer layer T-BUF and may bedisposed to cover all the first and second blocking structures DAM1 andDAM2.

Although the exemplary embodiments of the present disclosure have beendescribed in detail with reference to the accompanying drawings, thepresent disclosure is not limited thereto and may be embodied in manydifferent forms without departing from the technical concept of thepresent disclosure. Therefore, the exemplary embodiments of the presentdisclosure are provided for illustrative purposes only but not intendedto limit the technical concept of the present disclosure. The scope ofthe technical concept of the present disclosure is not limited thereto.Therefore, it should be understood that the above-described exemplaryembodiments are illustrative in all aspects and do not limit the presentdisclosure. The protective scope of the present disclosure should beconstrued based on the following claims, and all the technical conceptsin the equivalent scope thereof should be construed as falling withinthe scope of the present disclosure.

What is claimed is:
 1. A light emitting display device with anintegrated touch screen, comprising: a substrate which includes adisplay area in which a plurality of display pixels are disposed and anon-display area around the display area; an opening area which islocated inside the display area and passes through the substrate and afunction layer there above; a boundary area which is disposed to be incontact with an outside of the opening area; a pixel area in the displayarea excluding the opening area and the boundary area; an encapsulationunit which covers the pixel area, the non-display area, and the boundaryarea; a plurality of first touch electrodes which are disposed on theencapsulation unit of the pixel area and extends in a first direction,and a plurality of second touch electrodes which extend in a seconddirection; a first block structure and a second blocking structure whichare disposed in the non-display area and are configured to enclose thedisplay area; a first touch routing line which is disposed on the firstblocking structure and the second blocking structure, the first touchrouting line connected with the first touch electrode; a second touchrouting line which is disposed on the first blocking structure and thesecond blocking structure, the second touch routing line connected withthe second touch electrode; a touch buffer layer which covers theencapsulation unit; and a step compensation layer which is locatedbetween the touch buffer layer and the first touch routing line and thesecond touch routing line, wherein the step compensation layer overlapsthe first blocking structure and the second blocking structure.
 2. Thelight emitting display device according to claim 1, wherein theencapsulation unit suppresses permeation of moisture or oxygen into thepixel area and comprises at least three layers.
 3. The light emittingdisplay device according to claim 2, wherein the encapsulation unitcomprises two inorganic encapsulation layers and one organicencapsulation layer.
 4. The light emitting display device according toclaim 3, wherein the organic encapsulation layer planarizes a surface ofthe inorganic encapsulation layer below the organic encapsulation layerand a height of the organic encapsulation layer is decreased toward thefirst blocking structure and the second blocking structure from thedisplay area.
 5. The light emitting display device according to claim 1,further comprising: a light emitting diode in the display area; a thinfilm transistor connected to the light emitting diode; a planarizationlayer disposed on the thin film transistor; a bank which exposes ananode electrode of the light emitting diode; and a spacer above thebank, wherein each of the first blocking structure and the secondblocking structure is formed of a same material as at least one of theplanarization layer, the bank, or the spacer.
 6. The light emittingdisplay device according to claim 5, wherein the step compensation layeris in contact with the touch buffer layer and partially overlaps thefirst blocking structure and the second blocking structure.
 7. The lightemitting display device according to claim 6, wherein the stepcompensation layer is formed of an organic insulating material.
 8. Thelight emitting display device according to claim 4, wherein the stepcompensation layer is formed of a same material as the organicencapsulation layer included in the encapsulation unit.
 9. The lightemitting display device according to claim 8, further comprising: atouch planarization layer which covers the encapsulation unit in theboundary area.
 10. The light emitting display device according to claim9, wherein the touch planarization layer is disposed on a same plane asthe step compensation layer and formed of a same material as the stepcompensation layer.
 11. The light emitting display device according toclaim 1, further comprising an organic cover layer which covers thefirst touch routing line and the second touch routing line.
 12. A lightemitting display device with an integrated touch screen, comprising: asubstrate which includes a display area in which a plurality of displaypixels are disposed and a non-display area around the display area; alight emitting diode in the display area; an encapsulation unit whichcovers the display area and the non-display area; a touch electrode lineon the encapsulation unit; a touch routing line which is disposed in thenon-display area, the touch routing line connected to the touchelectrode line; a plurality of blocking structures which are disposed inthe non-display area, the plurality of blocking structures configured toenclose the display area; and a step compensation layer disposed betweenthe encapsulation unit and the touch routing line; wherein the stepcompensation layer reduces a step caused by the plurality of blockingstructures to reduce irregularities of a surface of the encapsulationunit.
 13. The light emitting display device according to claim 12,further comprising: an opening area which is located inside the displayarea, the opening area passing through the substrate.
 14. The lightemitting display device according to claim 13, further comprising: aboundary area which is disposed to be in contact with an outside of theopening area.
 15. The light emitting display device according to claim14, further comprising: a touch planarization layer which is in theboundary area, the touch planarization layer covering the encapsulationunit.
 16. The light emitting display device according to claim 15,wherein the step compensation layer and the touch planarization layerare disposed on a same plane and formed of a same material.
 17. Thelight emitting display device according to claim 16, further comprising:a thin film transistor connected to the light emitting diode; aplanarization layer disposed on the thin film transistor; a bank whichexposes an anode electrode of the light emitting diode; and a spacerabove the bank, wherein each of the plurality of blocking structures isformed of a same material as at least one of the planarization layer,the bank, or the spacer.
 18. The light emitting display device accordingto claim 17, further comprising: a touch buffer layer between the stepcompensation layer and the encapsulation unit.
 19. The light emittingdisplay device according to claim 18, wherein the plurality of blockingstructures include a first blocking structure and a second blockingstructure and the step compensation layer is in contact with the touchbuffer layer and partially overlaps the first blocking structure and thesecond blocking structure.
 20. The light emitting display deviceaccording to claim 18, wherein the plurality of blocking structuresinclude a first blocking structure and a second blocking structure andthe step compensation layer is in contact with the touch buffer layerand covers the first blocking structure and the second blockingstructure.
 21. The light emitting display device according to claim 12,further comprising an organic cover layer which covers the touchelectrode line and the touch routing line.